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| Manufacturer | Lite-on Semiconductor |
|---|---|
| Manufacturer's Part Number | 2N7002DW |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain-Source On Resistance: 7.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): 5 pF; |
| Datasheet | 2N7002DW Datasheet |
| In Stock | 58,220 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 5 pF |
| Maximum Drain Current (ID): | .115 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | FAST SWITCHING |
| Maximum Drain-Source On Resistance: | 7.5 ohm |









