Infineon Technologies - 2N7002H6327XTSA2

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2N7002H6327XTSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number 2N7002H6327XTSA2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet 2N7002H6327XTSA2 Datasheet
In Stock210,768
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .3 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 3 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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