Image shown is a representation only.
| Manufacturer | Solitron Devices |
|---|---|
| Manufacturer's Part Number | WC191 |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Package Style (Meter): DIE; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED; |
| Datasheet | WC191 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: | 455-WC-191 |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SEPARATE, 2 ELEMENTS |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 1.5 pF |
| Polarity or Channel Type: | P-CHANNEL |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Package Style (Meter): | DIE |
| JESD-30 Code: | DIE-6 |
| No. of Elements: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | 300 ohm |









