SINGLE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

ZVN2120ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

ZVP3310ASMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.14 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN1409A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

90 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

250 ohm

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

.65 pF

ZVN2120ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVN2120ASMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.18 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP0540ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

400 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

150 ohm

.045 A

SINGLE

R-PSIP-W3

Not Qualified

ZVP1320ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.07 A

SINGLE

R-PSIP-W3

Not Qualified

UZVP3310ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP0120ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.11 A

SINGLE

R-PSIP-W3

Not Qualified

ZVP3310ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZVN3310ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BST82TC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.175 A

DUAL

R-PDSO-G3

Not Qualified

BST86TA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

180 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

10 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e0

10

235

10 pF

BS208B

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.83 W

150 Cel

SILICON

14 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

UBSS84TA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.13 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP0120ASTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.11 A

SINGLE

R-PSIP-W3

Not Qualified

ZVP3310ASTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

20 ohm

.14 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZVN4424Z

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5.5 ohm

.3 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

40

260

15 pF

UZVP3306F

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

14 ohm

.09 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

8 pF

UBSS123ATA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVP0120AM1

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

32 ohm

.11 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN2110AM1

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

CECC

ZVP0540ASMTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

150 ohm

.045 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN2120A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

.18 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.18 A

BOTTOM

O-PBCY-W3

1

Not Qualified

e3

260

7 pF

FMMJ174TA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

85 ohm

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVN2110CSTOF

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSIP-T3

Not Qualified

UZVP4424ASTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

15 ohm

.2 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZVP1320ASM

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.07 A

SINGLE

R-PSSO-G3

Not Qualified

UZVP1320FTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.035 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5 pF

UZVP0545A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

150 ohm

.045 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

5 pF

U2N7002TC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

7.5 ohm

.115 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5 pF

UZVP2120A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

25 ohm

.12 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

7 pF

ZCN0545ASMTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.32 A

SINGLE

R-PSSO-G3

Not Qualified

ZVP3310FCT

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

20 ohm

.075 A

DUAL

R-PDSO-G3

Not Qualified

5 pF

UBSS123ATC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZVP1320FTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

80 ohm

.035 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5 pF

UZVN3306F

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

5 ohm

.15 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

40

260

8 pF

UZVN4106FTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.5 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

8 pF

ZCN0545ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

UZVN3320A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

25 ohm

.1 A

SINGLE

R-PSIP-W3

Not Qualified

e3

10

260

UZVN2120ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

UZVP2110A

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

8 ohm

.23 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

10

260

10 pF

CECC

ZVP0120ASM

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

16 ohm

.11 A

SINGLE

R-PSSO-G3

Not Qualified

DI9400

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.21 ohm

3.4 A

DUAL

R-PDSO-G8

Not Qualified

e0

UZVP3306FTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

14 ohm

.09 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

8 pF

BS850T7-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.31 W

150 Cel

SILICON

.15 A

DUAL

R-PDSO-G3

Not Qualified

ZVN2110CSTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.32 A

SINGLE

R-PSIP-W3

Not Qualified

ZCN0545ASM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.32 A

SINGLE

R-PSSO-G3

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.