SINGLE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK4078B-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

32 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

2SK322WRTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK322WTTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK1070PIBTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3385(0)-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

2SK160

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

.02 A

DUAL

R-PDSO-G3

2SK494BRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK431IHFTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK322WQTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK190TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

2SK1584-T1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

NOT SPECIFIED

NOT SPECIFIED

2SK494RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-W3

Not Qualified

2SK3813-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

2SK3402-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

2SK431IHF01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK3402(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

2SK431IHFTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK322-R

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK1070PIDTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN LEAD

.05 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK1590-T1B-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

.2 W

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

NOT SPECIFIED

NOT SPECIFIED

2SK435DRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK186RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435ERF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK4075B-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

NOT SPECIFIED

NOT SPECIFIED

2SK322WT01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK1070PICTR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.05 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

2SK40RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435-B

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK494DTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK3634-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

20 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

2SK3349

Renesas Electronics

N-CHANNEL

SINGLE

YES

.1 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.05 A

2SK187TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK1031XDBTL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.005 A

DUAL

R-PDSO-G3

Not Qualified

2SK431IHEUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK435-C

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK1326XJD

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

22 V

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3484-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

2SK4095-T-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

WIRE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.0005 A

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK1070PID01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK323KD01

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK323KDUL

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.03 A

DUAL

R-PDSO-G3

Not Qualified

2SK4076-ZK

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.025 ohm

35 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

e0

2SK1772HYTR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.85 ohm

1 A

SINGLE

R-PSSO-F3

Not Qualified

e0

UPA1914TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

2SK3377(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

2SK1070PIETR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

.15 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.05 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

20

260

2SK1070

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3919-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.