SINGLE WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSS123K-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.23 A

DUAL

R-PDSO-G3

e3

260

BSS138A-TP-HF

Micro Commercial Components

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.6 ohm

.22 A

DUAL

R-PDSO-G3

1

e3

10

260

BST82,235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

DMN2005LP4K-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3.5 ohm

.2 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

30

260

DMN2230UQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.11 ohm

2 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMN2600UFB-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.3 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.35 ohm

1.3 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

DMN67D8L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

5 ohm

.21 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMP2005UFG-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.004 ohm

19 A

DUAL

S-PDSO-N5

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

DMP2078LCA3-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

.81 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.78 ohm

3.4 A

BOTTOM

R-XBCC-N3

1

DRAIN

e4

30

260

6.4 pF

DMP21D5UFB4-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.7 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

1 ohm

.5 A

BOTTOM

R-PBCC-N3

1

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMP3037LSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.032 ohm

5.8 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMP32D9UFZ-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

5 ohm

.2 A

BOTTOM

S-PBCC-N3

1

DRAIN

e4

260

DN3545N3-GP002

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

20 ohm

.136 A

BOTTOM

O-PBCY-W3

HIGH INPUT IMPEDANCE

TO-92

15 pF

DN3545N3-GP014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

20 ohm

.136 A

BOTTOM

O-PBCY-W3

HIGH INPUT IMPEDANCE

TO-92

15 pF

FDC6392S

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.96 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.15 ohm

2.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

FDC653N_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

FDG327N_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.38 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.09 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

FDMA410NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

9.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.023 ohm

9.5 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e4

NOT SPECIFIED

NOT SPECIFIED

130 pF

IRF7465TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.28 ohm

1.9 A

DUAL

R-PDSO-G8

1

MS-012AA

IRHLUB770Z4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

.8 A

DUAL

R-XDSO-N3

Not Qualified

e0

JANSF2N7616UBC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

.8 A

DUAL

R-XDSO-N3

Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

MIL-19500/744

JANSF2N7616UBCN

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.68 ohm

.8 A

DUAL

R-XDSO-N3

ISOLATED

Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

MIL-19500/744

NVLUS4C12NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.54 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

6.8 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101

NX138BKWX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

3.5 ohm

.21 A

DUAL

R-PDSO-G3

1

e3

30

260

IEC-60134

PJA138L_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4.2 ohm

.25 A

DUAL

R-PDSO-G3

e3

40

260

PJA3428_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.2 ohm

.3 A

DUAL

R-PDSO-G3

e3

40

260

PJA3438_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.45 ohm

.5 A

DUAL

R-PDSO-G3

e3

40

260

PJA3476_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

6 ohm

.3 A

DUAL

R-PDSO-G3

e3

40

260

PJA7002H_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

5 ohm

.3 A

DUAL

R-PDSO-G3

e3

40

260

PJC7403_R1_00001

Panjit International

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.325 ohm

.7 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PJC7407_R1_00001

Panjit International

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.125 ohm

1.3 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PJC7428_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.2 ohm

.3 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PJC7438_R1_00001

Panjit International

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.45 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

PJE8439_R1_00001

Panjit International

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.2 A

DUAL

R-PDSO-F3

PMF250XNE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.254 ohm

.9 A

DUAL

R-PDSO-G3

1

e3

30

260

IEC-60134

PMF290XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.35 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

PMV32UP/MIR

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.036 ohm

4 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMV50UPEVL

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.066 ohm

3.2 A

DUAL

R-PDSO-G3

1

TO-236AB

30

260

IEC-60134

PMZ390UNEYL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.47 ohm

.9 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

PMZB600UNELYL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

3 ohm

.6 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

PMZB950UPEYL

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.4 ohm

.5 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

RHU002N06FRAT106

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

4 ohm

.2 A

DUAL

R-PDSO-G3

1

e1

10

260

AEC-Q101

RSR030N06FRATL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.105 ohm

3 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

45 pF

AEC-Q101

RTL020P02FRATR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

2 A

DUAL

R-PDSO-F6

1

10

260

AEC-Q101

RTR020P02FRATL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.15 ohm

2 A

DUAL

R-PDSO-G3

1

10

260

AEC-Q101

SI2343DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.053 ohm

3.1 A

DUAL

R-PDSO-G3

TO-236AB

105 pF

SI3443DV_NL

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

SI3445DV_NL

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.033 ohm

5.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.