3 W Small Signal Field Effect Transistors (FET) 33

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SI4463BDY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.011 ohm

9.8 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

SI4848DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.085 ohm

2.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

SI4848DY-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.085 ohm

2.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

IRF7811AVTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

10.8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

10.8 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

30

260

SI4423DY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0075 ohm

10 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

SI4463BDY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.011 ohm

9.8 A

DUAL

R-PDSO-G8

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

SI4421DY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.00875 ohm

10 A

DUAL

R-PDSO-G8

1

MS-012AA

e3

30

260

SI3483DDV-T1-BE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0312 ohm

8 A

DUAL

R-PDSO-G6

1

MO-193AA

e3

30

260

35 pF

SI3483DDV-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0312 ohm

8 A

DUAL

R-PDSO-G6

MO-193AA

35 pF

FQN1N60CTA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

11.5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

6 pF

SQ2318ES-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.04 ohm

6 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

NOT SPECIFIED

NOT SPECIFIED

50 pF

SI3457CDV-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.074 ohm

5.1 A

DUAL

R-PDSO-G6

1

Not Qualified

MO-193AA

e3

40

260

63 pF

SI4401DY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0155 ohm

8.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

SI4401DY-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0155 ohm

8.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

SI3457CDV-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.1 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.074 ohm

5.1 A

DUAL

R-PDSO-G6

1

Not Qualified

MO-193AA

e3

30

260

63 pF

SI4866DY-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

SWITCHING

12 V

ENHANCEMENT MODE

1

11 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

11 A

1

e3

30

260

STQ2NF06L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.14 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

STQ1NE10L-AP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.45 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW THRESHOLD

TO-92

e3

STQ1NE10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.45 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

LOW THRESHOLD

TO-92

e0

DMG7410SFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

AF01N60CZ-E1

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

15 ohm

.3 A

BOTTOM

O-PBCY-T3

TO-92

5 pF

AF01N60CZTR-E1

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

15 ohm

.3 A

BOTTOM

O-PBCY-T3

TO-92

5 pF

DMG7410SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

5.3 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

ZXMN3AM832TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2.9 A

DUAL

R-PDSO-F8

1

Not Qualified

LOW THRESHOLD

e3

260

ZXMN3AM832TC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2.9 A

DUAL

R-PDSO-F8

1

Not Qualified

LOW THRESHOLD

e3

260

ZXMN2AM832TC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2.9 A

DUAL

R-PDSO-F8

1

Not Qualified

LOW THRESHOLD

e3

260

ZXMP62M832TA

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

1.3 A

10

FLATPACK

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.6 ohm

1.3 A

QUAD

R-PQFP-F10

1

Not Qualified

e3

260

ZXMN2AM832TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2.9 A

DUAL

R-PDSO-F8

1

Not Qualified

LOW THRESHOLD

e3

260

RJF0610JSP-00#J0

Renesas Electronics

N-CHANNEL

YES

3 W

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

RJF0610DSP-00-J0

Renesas Electronics

N-CHANNEL

YES

3 W

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

HAT2057RA

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

4 A

DUAL

R-PDSO-G8

Not Qualified

RJF0610JSP-00-J0

Renesas Electronics

N-CHANNEL

YES

3 W

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

RJF0610DSP-00#J0

Renesas Electronics

N-CHANNEL

YES

3 W

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.