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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SQ2318ES-T1-GE3 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 6 A; |
| Datasheet | SQ2318ES-T1-GE3 Datasheet |
| In Stock | 1,486 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 6 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .04 ohm |
| Maximum Feedback Capacitance (Crss): | 50 pF |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 6 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
