Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.06 ohm |
20 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e0 |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
21 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0302 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
2.5 ohm |
1 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.036 ohm |
36 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251 |
10 |
260 |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
22 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
11 ohm |
1 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
.2 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
.3 W |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
.1 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
4 pF |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
6 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0056 ohm |
64 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AB |
10 |
260 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
NO |
.4 W |
FET General Purpose Small Signal |
JUNCTION |
125 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.029 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251 |
10 |
260 |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
16 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.148 ohm |
16 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251 |
10 |
260 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.006 ohm |
.0005 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4.5 ohm |
.5 A |
BOTTOM |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.078 ohm |
20 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AB |
e0 |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
40 ohm |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
GATE PROTECTED |
e0 |
|||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
19 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.025 ohm |
.03 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.014 ohm |
36 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251 |
10 |
260 |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.4 ohm |
3 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
TO-251 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4.5 ohm |
.0005 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
29 W |
1 |
48 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
48 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
1 ohm |
1 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
GATE PROTECTED, HIGH INPUT IMPEDANCE |
e1 |
10 |
260 |
||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
PLASTIC/EPOXY |
SWITCHING |
180 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.65 ohm |
4 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
29 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0145 ohm |
48 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.059 ohm |
28 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e0 |
||||||||||||||||||||||
Renesas Electronics |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
ROUND |
3 |
CYLINDRICAL |
TIN COPPER |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e2 |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.4 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
5.9 ohm |
.4 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
38 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.0048 ohm |
64 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
.75 W |
1 |
.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
.5 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
2.5 ohm |
1 A |
BOTTOM |
O-PBCY-T3 |
1 |
Not Qualified |
TO-92 |
e2 |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
29 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.015 ohm |
48 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
.1 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
4 pF |
|||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
.1 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4.4 ohm |
2 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE ENERGY RATED |
TO-251 |
10 |
260 |
||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
21 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.0302 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e6 |
10 |
260 |
|||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.045 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e0 |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
22 V |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
4 pF |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
24 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.43 ohm |
8 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e6 |
10 |
260 |
|||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
IN-LINE |
JUNCTION |
SILICON |
.01 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.011 ohm |
.064 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.6 ohm |
6 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-251 |
e6 |
10 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.