NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK187RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK3380

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

.3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.44 ohm

.3 A

SINGLE

R-PSIP-T3

Not Qualified

2SK3225

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.027 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK494TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-W3

Not Qualified

2SK1282-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

3 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

GATE PROTECTED

10

260

2SK40RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK4069(1)-S27-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.021 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

2SK3712

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.58 ohm

9 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

e0

2SK3402

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.022 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK40TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK3367

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.014 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK494

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK494DRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK3365

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.029 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK186TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK494BTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK3813

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

84 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0071 ohm

.06 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

2SK435CRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK1274

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1 ohm

1.5 A

SINGLE

R-PSIP-T3

Not Qualified

GATE PROTECTED, HIGH INPUT IMPEDANCE

e0

2SK3635

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.43 ohm

8 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

2SK435CRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK194

Renesas Electronics

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

125 Cel

2SK4058(1)-S27-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

29 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0145 ohm

48 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

2SK1284

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.4 ohm

3 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK435CTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SK1272

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

1 A

e0

2SK3484

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.148 ohm

16 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK3484-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.148 ohm

16 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

50 pF

2SK3386

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.036 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK4036-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

10

260

2SK3794

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.078 ohm

20 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK435RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435DRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK1274-T-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

1 W

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

NOT SPECIFIED

NOT SPECIFIED

2SK4148-T-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SK187RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK4070-S15-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 ohm

1 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

2SK1954-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

180 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.65 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

GATE PROTECTED

10

260

2SK3225-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.027 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK3113B-S15-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.4 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e3

2SK186RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK3507

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.073 ohm

22 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

e0

2SK1336TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

.3 A

BOTTOM

O-PBCY-W3

1

Not Qualified

TO-92

2SK3447

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

2.5 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SK435BRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK1656

Renesas Electronics

N-CHANNEL

SINGLE

NO

.25 W

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 Cel

Tin/Lead (Sn/Pb)

.1 A

e0

2SK1108

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.01 A

SINGLE

R-PSIP-T3

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.