NO Small Signal Field Effect Transistors (FET) 1,839

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK494BRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK3113B(1)-S27-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.4 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

2SK190TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

2SK3366

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.043 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK494RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-W3

Not Qualified

2SK3716

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

84 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0091 ohm

60 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251AA

2SK3919

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0056 ohm

64 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK3446TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

2.5 ohm

1 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

e2

2SK3366-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.043 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK3483-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.059 ohm

28 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK435DRF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK186RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435ERF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK4069-S15-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.021 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e3

2SK40RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.01 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435-B

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK494DTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-T3

Not Qualified

4 pF

2SK187TZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.03 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

2SK435-C

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

.1 A

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

4 pF

2SK194L

Renesas Electronics

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

125 Cel

2SK4095-T-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

250 V

WIRE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.5 ohm

.0005 A

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3386-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.036 ohm

34 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK3918

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

29 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0075 ohm

48 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK4178(1)-S27-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.009 ohm

48 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

2SK3482-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK3385-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

30 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK4093TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.7 ohm

1 A

BOTTOM

O-PBCY-T3

1

Not Qualified

2SK3993

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0038 ohm

64 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK435DTZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SK3113

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.4 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE ENERGY RATED

TO-251AA

e0

2SK494RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

WIRE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.1 A

SINGLE

R-PSIP-W3

Not Qualified

2SK3484-S16-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.148 ohm

16 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

50 pF

2SK3992-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0048 ohm

64 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e6

10

260

2SK4071-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

ENHANCEMENT MODE

1

1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

1 A

BOTTOM

O-PBCY-W3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3482

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.039 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AB

e0

2SK190RR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

2SK435BRR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK1132

Renesas Electronics

N-CHANNEL

SINGLE

NO

.25 W

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.1 A

e0

2SK435ERR

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

22 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

4 pF

2SK1337TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6.5 ohm

.3 A

BOTTOM

O-PBCY-W3

1

Not Qualified

TO-92

2SK3385(0)-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

36 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

2SK1482

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

1.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

1.5 A

BOTTOM

O-PBCY-T3

Not Qualified

GATE PROTECTED

e0

2SK3224

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

20 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

2SK3991

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0302 ohm

30 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

2SK3446

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

2.5 ohm

1 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2SK3402-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.036 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251

10

260

2SK4070(1)-S27-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 ohm

1 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

2SK190RF

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.