Renesas Electronics - 2SK3716

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2SK3716 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK3716
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 84 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
Datasheet 2SK3716 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
JEDEC-95 Code: TO-251AA
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 84 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 60 A
Maximum Drain-Source On Resistance: .0091 ohm
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