NXP Semiconductors - BSS138PS

BSS138PS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BSS138PS
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
Datasheet BSS138PS Datasheet
In Stock2,350
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .32 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: PURE TIN
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: 1.6 ohm
Moisture Sensitivity Level (MSL): 1
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