Diodes Incorporated Small Signal Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMP58D0LFB-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.22 W

PLASTIC/EPOXY

SWITCHING

50 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.31 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

8 ohm

.18 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

ZVN4424ASMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.26 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN31D6UT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.32 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.5 ohm

.35 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

2.2 pF

AEC-Q101

DMN3070SSN-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

4.2 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZVP4424CSTOB

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

9 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

15 pF

ZVN0124ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

16 ohm

.16 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

ZVN3320DWP

Diodes Incorporated

N-CHANNEL

SINGLE

YES

UNSPECIFIED

200 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

25 ohm

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

DMN3115UDM-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.06 ohm

3.2 A

DUAL

R-PDSO-G6

1

e3

30

260

DMN3060LVT-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.16 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

3.6 A

DUAL

R-PDSO-G6

e3

260

26 pF

ZVP4424CSTZ

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

9 ohm

.2 A

BOTTOM

O-PBCY-W3

Not Qualified

LOW THRESHOLD

15 pF

DMN2991UTQ-7

Diodes Incorporated

MATTE TIN

e3

260

DMP2900UDW-13

Diodes Incorporated

MATTE TIN

e3

260

DMP22D6UT-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.43 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.1 ohm

.43 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

20 pF

ZVP2106DWP

Diodes Incorporated

P-CHANNEL

SINGLE

YES

UNSPECIFIED

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

2

UNCASED CHIP

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

5 ohm

UPPER

S-XUUC-N2

Not Qualified

e0

10

235

ZVP2110CSTOA

Diodes Incorporated

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

8 ohm

.23 A

SINGLE

R-PSIP-W3

Not Qualified

DMP3036SFV-13

Diodes Incorporated

MATTE TIN

1

e3

260

ZVNL120CSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.18 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN63D8LV-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.26 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

.22 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

ZXMP3F37N8TA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10.7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

6.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

2N7000PSM

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.2 A

SINGLE

R-PSSO-G3

Not Qualified

ZVN0540ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

400 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

50 ohm

.09 A

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

DMP2200UDW-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

.26 ohm

.9 A

DUAL

R-PDSO-G6

1

e3

260

ZXMN6A11DN8TC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.0021 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.1 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.14 ohm

2.1 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

BSS8402DWK-7

Diodes Incorporated

MATTE TIN

e3

30

260

DMN2230UQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.11 ohm

2 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMN1017UCP3-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.024 ohm

7.5 A

BOTTOM

S-XBCC-N3

SOURCE

e3

30

260

389 pF

ZXMP3F37DN8TA

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

5.7 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

DMN3023L-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

6.2 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

67 pF

AEC-Q101

DMN6040SFDEQ-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

260

ZVN4525ZTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

8.5 ohm

.24 A

SINGLE

R-PSSO-F3

1

DRAIN

Not Qualified

e3

40

260

DMN2451UFB4Q-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.4 ohm

1.3 A

BOTTOM

R-PBCC-N3

DRAIN

e4

260

3.7 pF

AEC-Q101; IATF 16949

2N7002AX-13

Diodes Incorporated

MATTE TIN

e3

30

260

DMG3401LSNQ-7

Diodes Incorporated

MATTE TIN

1

e3

260

DMP1009UFDFQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP3035SFG-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8.5 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

7 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

ZVNL120CSMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.18 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN3042LFDF-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

ZXMN2A02X8TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.67 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

7.6 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e3

30

260

DMP32D4SW-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.432 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.4 ohm

.25 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMG3404L-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.025 ohm

4.2 A

DUAL

R-PDSO-G3

1

e3

30

260

DMN2013UFX-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

30

260

DMN65D8LT-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.21 A

DUAL

R-PDSO-G3

e3

260

1.8 pF

ZXMN2F34MATA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

UNSPECIFIED

SWITCHING

20 V

C BEND

SQUARE

ENHANCEMENT MODE

1

5.1 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

4 A

DUAL

S-XDSO-C3

1

DRAIN

Not Qualified

e3

260

DMP25H18DLFDE-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.4 W

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

14 ohm

.26 A

DUAL

S-PDSO-N3

DRAIN

LOW THRESHOLD

e4

260

4 pF

DMC2450UV-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.7 ohm

1.03 A

DUAL

R-PDSO-F6

1

ESD PROTECTED

e3

260

DMP2104V-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.21 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.86 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

.86 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMG3415UFY4-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.49 W

PLASTIC/EPOXY

SWITCHING

16 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.039 ohm

2.5 A

DUAL

R-PDSO-N3

1

DRAIN

Not Qualified

e4

30

260

ZVN3306ASMTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.27 A

SINGLE

R-PSSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.