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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN2320UFB4-7B |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e4; Terminal Position: BOTTOM; No. of Terminals: 3; |
| Datasheet | DMN2320UFB4-7B Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
DMN2320UFB4-7BDITR 31-DMN2320UFB4-7BTR DMN2320UFB4-7BDICT DMN2320UFB4-7BDIDKR DMN2320UFB4-7BDI 31-DMN2320UFB4-7BDKR DMN2320UFB4-7BDI-ND 31-DMN2320UFB4-7BCT |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 20 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .32 ohm |









