NXP Semiconductors Small Signal Field Effect Transistors (FET) 1,505

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

934057952215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.047 ohm

4.9 A

DUAL

R-PDSO-G3

TO-236AB

933710530112

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.19 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

NOT SPECIFIED

NOT SPECIFIED

10 pF

PBSM5240PFH

NXP Semiconductors

TIN

1

e3

BSN10

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.83 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.175 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

20 ohm

.175 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

PMZ320UPE

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.51 ohm

1 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

934056595118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.038 ohm

6.3 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

NOT SPECIFIED

NOT SPECIFIED

PHC21025,118

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

2

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

4 W

150 Cel

SILICON

3.5 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

30

260

934057303518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

4 A

DUAL

R-PDSO-G8

MS-012AA

934063611215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.6 ohm

.3 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

TO-236AB

7.5 pF

933733130115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

180 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

10 pF

PHK28NQ03LT,518

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0065 ohm

23.7 A

DUAL

R-PDSO-G8

2

Not Qualified

MS-012

e4

30

260

933773790215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN

30 ohm

.012 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

3.5 pF

934057329165

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

5.7 A

DUAL

R-PDSO-G6

BSP89TRL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.35 A

DUAL

R-PDSO-G4

1

Not Qualified

e3

PMT29EN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.036 ohm

6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PMWD20XN

NXP Semiconductors

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

7.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

10.4 A

DUAL

R-PDSO-G8

2

Not Qualified

MO-153

260

BST100

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.3 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

12 pF

934005310126

NXP Semiconductors

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN

250 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

PHT2NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.43 ohm

2.5 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

e3

IEC-60134

PMF400UN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.83 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.48 ohm

.83 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

BST120-TAPE-7

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.3 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

12 pF

934068943215

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.055 ohm

3.5 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

TO-236AB

934054718215

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.9 ohm

.52 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

934057773215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.036 ohm

5.7 A

DUAL

R-PDSO-G3

TO-236AB

BST84T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

12 ohm

.25 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

10 pF

PMZB290UN,315

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.35 ohm

1 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

PMZ950UPE

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.4 ohm

.5 A

BOTTOM

R-PBCC-N3

1

DRAIN

e3

30

260

IEC-60134

BSD215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

METAL

SWITCHING

20 V

WIRE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

45 ohm

.05 A

BOTTOM

O-MBCY-W3

SUBSTRATE

Not Qualified

TO-72

PHN103/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.03 ohm

8.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

934056997215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

2 ohm

.475 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

10 pF

933163480235

NXP Semiconductors

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

TIN

.01 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

1.5 pF

PMXB360ENEA

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.45 ohm

1.1 A

DUAL

R-PDSO-N3

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

AEC-Q101; IEC-60134

934060156315

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.56 ohm

1.78 A

BOTTOM

R-PBCC-N3

DRAIN

PZFJ108

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

8 ohm

DUAL

R-PDSO-G4

Not Qualified

15 pF

PMT200EN

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.235 ohm

1.8 A

DUAL

R-PDSO-G4

DRAIN

LOGIC LEVEL COMPATIBLE

IEC-60134

BSP92TRL13

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.18 A

DUAL

R-PDSO-G4

Not Qualified

934057957115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.44 ohm

.84 A

DUAL

R-PDSO-G3

934064134115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.6 ohm

.32 A

DUAL

R-PDSO-G6

LOGIC LEVEL COMPATIBLE

ON5520

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

10 pF

BUK9MHH-65PNN

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

20

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0126 ohm

15 A

DUAL

R-PDSO-G20

3

ISOLATED

Not Qualified

CURRENT SENSING

MS-013AC

BSN12A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

PHP206

NXP Semiconductors

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.065 ohm

5.6 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

e4

BST80

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

12 pF

934058035118

NXP Semiconductors

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.022 ohm

10.4 A

DUAL

R-PDSO-G8

MO-153

934064285115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.6 ohm

.29 A

DUAL

R-PDSO-G3

LOGIC LEVEL COMPATIBLE

P304G002A4

NXP Semiconductors

YES

PLASTIC/EPOXY

NO LEAD

RECTANGULAR

2

SMALL OUTLINE

DUAL

R-PDSO-N2

Not Qualified

PMF400UN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.83 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.48 ohm

.83 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

934056036235

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4 ohm

.335 A

DUAL

R-PDSO-G3

1

Not Qualified

FAST SWITCHING

TO-236AB

e3

10 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.