NXP Semiconductors - PHC21025,118

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PHC21025,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHC21025,118
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Position: DUAL;
Datasheet PHC21025,118 Datasheet
In Stock1,200
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 4 W
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.5 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,200 $0.231 $277.200

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