National Semiconductor Small Signal Field Effect Transistors (FET) 40

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N7000/D26Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

2N7000/D74Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

BS170/D27Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BS170/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BS170/D75Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NDS7002A/D87Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

2 ohm

.28 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

5 pF

NDS331N/D87Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.46 W

150 Cel

SILICON

.21 ohm

1.3 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

BSS138/L99Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.22 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

10 pF

NDS9407/D84Z

National Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

.15 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

PN5019

National Semiconductor

P-CHANNEL

NO

.35 W

FET General Purpose Small Signal

JUNCTION

125 Cel

Tin/Lead (Sn/Pb)

e0

J175D26Z

National Semiconductor

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

125 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2N5457/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457/D27Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

J112D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BSS138/D87Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.22 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

10 pF

BSS123D87Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.17 A

DUAL

R-PDSO-G3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236AB

6 pF

J111D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J176D74Z

National Semiconductor

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

250 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

J113D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NPD5566

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

PN4091

National Semiconductor

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

Tin/Lead (Sn/Pb)

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

2N7000/D75Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

5 pF

BS170/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

BS270/D74Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

.4 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2N7002/L99Z

National Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

7.5 ohm

.115 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

5 pF

NPD5564

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

NPD5565

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS

NO

.325 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

2

8

IN-LINE

FET General Purpose Small Signal

JUNCTION

200 Cel

SILICON

TIN LEAD

DUAL

R-PDIP-T8

Not Qualified

e0

NDF9410

National Semiconductor

N-CHANNEL

NO

.375 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

2N5464

National Semiconductor

P-CHANNEL

NO

.31 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBFJ203

National Semiconductor

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

PN4302

National Semiconductor

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

3 pF

2N3112

National Semiconductor

P-CHANNEL

NO

.3 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

2N4342

National Semiconductor

P-CHANNEL

NO

.2 W

FET General Purpose Small Signal

JUNCTION

125 Cel

Tin/Lead (Sn/Pb)

e0

2N5452

National Semiconductor

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

2N5463

National Semiconductor

P-CHANNEL

NO

.31 W

FET General Purpose Small Signal

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

NDF9406

National Semiconductor

N-CHANNEL

NO

.375 W

FET General Purpose Small Signal

JUNCTION

200 Cel

Tin/Lead (Sn/Pb)

e0

NDH8301N

National Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.9 W

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.06 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

e0

PN4303/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

J112D27Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.