National Semiconductor - 2N7000/D75Z

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2N7000/D75Z by National Semiconductor

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Manufacturer National Semiconductor
Manufacturer's Part Number 2N7000/D75Z
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-92;
Datasheet 2N7000/D75Z Datasheet
In Stock7,874
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .2 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): .4 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 5 ohm
Other Names: 2N7000_D75ZFSTB
2N7000D75Z
2N7000_D75Z
2N7000_D75Z-ND
2N7000-D75ZTB
2N7000-D75ZFSCT
488-2N7000-D75ZTB
2N7000-D75ZFSCT-ND
2N7000_D75ZFSCT-ND
2N7000_D75ZTB
2N7000-D75ZTB-ND
2N7000_D75ZFSTB-ND
2N7000_D75ZTB-ND
2N7000_D75ZFSCT
488-2N7000-D75ZCT
Maximum Feedback Capacitance (Crss): 5 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
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