Nexperia Small Signal Field Effect Transistors (FET) 461

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

PMV35EPE/S711R

Nexperia

NX7002BK/S911R

Nexperia

NX3008CBKV/S711X

Nexperia

PMCM4402UPEZ

Nexperia

1

30

260

PMN48XPA2

Nexperia

TIN

1

e3

30

260

PMCM6501UPEZ

Nexperia

1

30

260

PMV30XPA

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.038 ohm

4.9 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

110 pF

AEC-Q101; IEC-60134

PMV25ENEAR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.024 ohm

5.5 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMV164ENEA

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMV170UN215

Nexperia

PMV30UN2VL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.032 ohm

4.2 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMN40ENA

Nexperia

TIN

1

e3

30

260

AEC-Q101

2N7002KQB

Nexperia

1

30

260

AEC-Q101

NX138BKVL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

3.8 ohm

.265 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMV13XNEA

Nexperia

TIN

1

e3

30

260

NX138AKVL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4.5 ohm

.19 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

PMV42ENER

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.036 ohm

4.4 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

IEC-60134

PMCM4401UNEZ

Nexperia

1

30

260

PMV28XPEA

Nexperia

TIN

1

e3

30

260

AEC-Q101

PMCM6501UNEZ

Nexperia

1

30

260

PMV65UNEA

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.073 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

43 pF

AEC-Q101; IEC-60134

PMCM4402UPE

Nexperia

1

30

260

PMV65UNER

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.073 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

IEC-60134

NX138BKM

Nexperia

TIN

1

e3

30

260

PMN42XPEAX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.046 ohm

4 A

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101; IEC-60134

PMDPB56XNEAX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.072 ohm

3.1 A

DUAL

R-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMGD175XNEAX

Nexperia

PMV65UNEAR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.073 ohm

2.8 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

43 pF

AEC-Q101; IEC-60134

PMV32UP/MI

Nexperia

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.