Nexperia - PMCM4401UNEZ

  1. Home
  2. Nexperia - PMCM4401UNEZ
PMCM4401UNEZ by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PMCM4401UNEZ
Description Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
Datasheet PMCM4401UNEZ Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS123 by Micro Commercial Components

BSS123

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
IRLML9303TRPBF by Infineon Technologies

IRLML9303TRPBF

Infineon Technologies

Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
2N7002DWQ-7-F by Diodes Incorporated

2N7002DWQ-7-F

Diodes Incorporated

Diodes Incorporated 2N7002DWQ-7-F is a N-channel FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package. Operating in enhancement mode, it has 7.5 ohm max drain-source resistance and peak reflow temp of 260°C.
FDN338P by Onsemi

FDN338P

Onsemi

FDN338P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.6A and 0.115 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with GULL WING terminals is designed for high power dissipation (0.5W) in surface mount configurations.
SI4401DDY-T1-GE3 by Vishay Intertechnology

SI4401DDY-T1-GE3

Vishay Intertechnology

SI4401DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 16.1A Drain Current, and 0.015 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C with GULL WING terminals in a RECTANGULAR package.
BC548B by Shanghai Lunsure Electronic Technology

BC548B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IRLML2803TRPBF by Infineon Technologies

IRLML2803TRPBF

Infineon Technologies

Infineon's IRLML2803TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.2A Drain Current, 0.25 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY package, it can handle temperatures from -55 to 150 °C.
ZVN3320FTA by Diodes Incorporated

ZVN3320FTA

Diodes Incorporated

ZVN3320FTA by Diodes Inc. is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 1A IDM and 0.06A ID, with 25 ohm RDS(on). Its GULL WING terminals and PLASTIC/EPOXY package make it suitable for surface mount designs requiring fast switching speeds.
BSS123 by Fairchild Semiconductor

BSS123

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 6 pF; Minimum DS Breakdown Voltage: 100 V;
2N7000 by Motorola

2N7000

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
2N7002KW by Micro Commercial Components

2N7002KW

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Qualification: Not Qualified;
2N7000G by Rochester Electronics

2N7000G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
2N7002T-7-F by Diodes Incorporated

2N7002T-7-F

Diodes Incorporated

2N7002T-7-F by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, making it suitable for surface mount designs in various electronic devices.
NDS356AP by Fairchild Semiconductor

NDS356AP

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30;
FDG8850NZ by Onsemi

FDG8850NZ

Onsemi

FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
BSS84 by Nexperia

BSS84

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138 by Inter F E T

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
BSS138NH6433XTMA1 by Infineon Technologies

BSS138NH6433XTMA1

Infineon Technologies

BSS138NH6433XTMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.36W power dissipation, and 3.5 ohm drain-source resistance. Ideal for small outline applications in automotive electronics due to AEC-Q101 reference standard compliance and -55 to 150 °C operating temperature range.
BSS84AKS,115 by NXP Semiconductors

BSS84AKS,115

NXP Semiconductors

NXP Semiconductors' BSS84AKS,115 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.16A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode.
BC548B by Tt Electronics Plc

BC548B

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; No. of Elements: 1;