Renesas Electronics Small Signal Field Effect Transistors (FET) 1,858

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

HAT2085R-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.64 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

20

260

RQM2201DNSTR-E

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

2 A

DUAL

S-PDSO-N6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ210-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.2 A

DUAL

R-PDSO-G3

e6

IT500

Renesas Electronics

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

2SJ210(0)-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.2 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2SJ210C-T1B-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RJK6011DJE-00-Z0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.1 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52 ohm

.1 A

BOTTOM

O-PBCY-T3

1

Not Qualified

TO-92

3SK136IV-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

NP23N06YDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

23 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.037 ohm

23 A

DUAL

R-PDSO-F8

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

130 pF

2SJ325-Z-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

20 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

2SK2415-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2SK2569ZN-TL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.6 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SJ210(0)-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

15 ohm

.2 A

DUAL

R-PDSO-G3

e6

3SK138IX

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

UPA1917TE-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

6 A

DUAL

R-PDSO-G6

Not Qualified

e6

10

260

2SJ211(0)-T1B-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.2 A

e6

2SK680A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

RQK0603CGDQA#H6

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

GWS9293

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

2SK2552-J7

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

SILICON

.01 A

DUAL

R-PDSO-G3

Not Qualified

UPA610TA(0)-T1-AT

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP30N04QUK-E1-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

RQK0606KGDQA#H1

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

NP35N055YUK-E2-AY

Renesas Electronics

NOT SPECIFIED

NOT SPECIFIED

3SK137VIW-TR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

15 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

UPA572T(0)-T1-AT

Renesas Electronics

N-CHANNEL

YES

.2 W

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NOT SPECIFIED

NOT SPECIFIED

UPA1980TE-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.57 W

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

TIN BISMUTH

2 A

e6

HAT2202C-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.055 ohm

3 A

DUAL

R-PDSO-F6

1

Not Qualified

e6

20

260

2SJ626

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.556 ohm

1.5 A

DUAL

R-PDSO-G3

Not Qualified

e0

RQK0201QGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.053 ohm

4.5 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

2SJ386TZ-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.9 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

3 A

BOTTOM

O-PBCY-T3

1

Not Qualified

UPA1913TE-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

3SK196XI-UR

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 A

DUAL

R-PDSO-G4

Not Qualified

2SJ601-Z-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.046 ohm

36 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252AB

10

260

2SK2552B-T1-A

Renesas Electronics

N-CHANNEL

YES

.1 W

Other Transistors

JUNCTION

125 Cel

NOT SPECIFIED

NOT SPECIFIED

UPA1742TP-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

24 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

NP33N06YDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

97 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

33 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.02 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

220 pF

2SK2414-Z

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.095 ohm

10 A

SINGLE

R-PSSO-G2

Not Qualified

e0

2SK853-K5

Renesas Electronics

N-CHANNEL

YES

.15 W

Other Transistors

JUNCTION

150 Cel

NOT SPECIFIED

NOT SPECIFIED

2SK2415(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

UPA509TA-UW

Renesas Electronics

RQK0204TGDQATL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.204 ohm

2.3 A

DUAL

R-PDSO-G3

1

Not Qualified

e6

2SJ325-Z-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

20 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

IT501

Renesas Electronics

N-CHANNEL

NO

.25 W

FET General Purpose Small Signal

JUNCTION

150 Cel

UPA2714GR-A

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.034 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA1793G-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.072 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA573T-A

Renesas Electronics

P-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

.2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80 Cel

SILICON

TIN BISMUTH

25 ohm

.1 A

DUAL

R-PDSO-G5

Not Qualified

e6

10

260

2SK2373ZE-TR-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7.5 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.