2SJ386TZ-E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SJ386TZ-E
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	2SJ386TZ-E Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.9 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	3 A
Maximum Drain-Source On Resistance:	.8 ohm
Moisture Sensitivity Level (MSL):	1

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