Toshiba Small Signal Field Effect Transistors (FET) 1,975

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SSM3J144TU,LXHF

Toshiba

SSM3J144TU,LXGF

Toshiba

SSM3J66MFV,L3XHF

Toshiba

SSM3J144TU,LF

Toshiba

SSM3K56MFV,L3F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.235 ohm

.8 A

DUAL

R-PDSO-F3

1

260

6 pF

SSM3K17FU,LXGF

Toshiba

SSM6J503NU,LF

Toshiba

SSM6L39TU,LF

Toshiba

SSM3K122TU,LXGF

Toshiba

SSM6N17FU,LXGF

Toshiba

SSM6P35FU,LXGF

Toshiba

SSM3K7002KF,LXGF

Toshiba

SSM3J35AMFV,L3F

Toshiba

SSM6L36TU,LXGF

Toshiba

SSM3K318R,LXGF

Toshiba

SSM3K15FU,LXGF

Toshiba

SSM3K347R,LF

Toshiba

SSM6N61NU,LXGF

Toshiba

SSM3K116TU,LXGF

Toshiba

SSM6P40TU,LXGF

Toshiba

SSM3K36FS,LF

Toshiba

SSM6N44FE,LXGM

Toshiba

SSM6J402TU,LXGF

Toshiba

SSM6N15AFE,LM

Toshiba

SSM6P35AFE,LF

Toshiba

SSM3J117TU,LXGF

Toshiba

SSM3K127TU,LXGF

Toshiba

SSM3J352F,LF

Toshiba

SSM3K347R,LXGF

Toshiba

SSM3J36FS,LXGF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.31 ohm

.33 A

DUAL

R-PDSO-G3

6.1 pF

SSM6J207FE,LF

Toshiba

SSM3K121TU,LXGF

Toshiba

SSM6K406TU,LXGF

Toshiba

SSM3K16CTC,L3F

Toshiba

SSM6P35FE,LXGM

Toshiba

SSM3K121TU,LF

Toshiba

SSM3K131TU,LXGF

Toshiba

SSM3J140TU,LXHF

Toshiba

SSM6N39TU,LXGF

Toshiba

SSM3K37CT,L3F

Toshiba

SSM3K2615R,LXGF

Toshiba

SSM6K202FE,LF

Toshiba

SSM6J410TU,LXGF

Toshiba

SSM6P15FU,LXGF

Toshiba

SSM3K336R,LXGF

Toshiba

SSM6L35FE,LXGM

Toshiba

SSM3K35FS,LXGF

Toshiba

SSM3J36MFV,LXGF

Toshiba

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.