Toshiba Small Signal Field Effect Transistors (FET) 1,975

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SSM3K37MFV,L3F

Toshiba

SSM3K36FS,LXGF

Toshiba

SSM6P36TU,LXGF

Toshiba

SSM6N62TU,LXGF

Toshiba

SSM3J112TU,LF

Toshiba

SSM6P35AFU,LF

Toshiba

SSM3J15CT,L3F

Toshiba

SSM6K810R,LXHF

Toshiba

SSM3K35MFV,L3XGF

Toshiba

SSM3K09FU,LF

Toshiba

SSM6N24TU,LXGF

Toshiba

SSM6N43FU,LXGF

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.2 W

150 Cel

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-G6

7.3 pF

SSM6K204FE,LF

Toshiba

SSM6L39TU,LXGF

Toshiba

SSM6N357R,LXGF

Toshiba

SSM6L36TU,LF

Toshiba

SSM6N40TU,LXGF

Toshiba

SSM3K2615TU,LF

Toshiba

SSM6N39TU,LF

Toshiba

SSM3K56ACT,L3F

Toshiba

SSM6N67NU,LXGF

Toshiba

SSM3J36FS,LF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.31 ohm

.33 A

DUAL

R-PDSO-G3

6.1 pF

SSM3J65CTC,L3F

Toshiba

SSM3K72KFS,LXHF

Toshiba

SSM3J15F,LXGF

Toshiba

SSM6K810R,LXGF

Toshiba

SSM3K15ACTC,L3F

Toshiba

SSM3K16FS,LF

Toshiba

SSM3J353F,LF

Toshiba

SSM6P15FE,LXGM

Toshiba

SSM3K336R,LF

Toshiba

SSM6P36FE,LM

Toshiba

SSM3J35MFV,L3XGF

Toshiba

SSM3J35FS,LXGF

Toshiba

SSM6J424TU,LXGF

Toshiba

SSM3J371R,LXGF

Toshiba

SSM3K44FS,LXGF

Toshiba

SSM6N68NU,LXGF

Toshiba

SSM6N68NU,LF

Toshiba

SSM3K357R,LXGF

Toshiba

SSM3J64CTC,L3F

Toshiba

SSM3K15F,LXGF

Toshiba

SSM6J50TU,LF

Toshiba

TPN11003NL,LQ

Toshiba

SSM6K403TU,LF

Toshiba

SSM3K72KCT,L3F

Toshiba

SSM6N35FU,LXGF

Toshiba

SSM3J327R,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.093 ohm

3.9 A

DUAL

R-PDSO-F3

32 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.