NXP Semiconductors Breakover Diodes 199

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Part	Manufacturer	Trigger Device Type	Package Style (Meter)	Surface Mount	Terminal Position	Configuration	Case Connection	Package Body Material	Nominal Holding Current	Minimum Breakdown Voltage	Terminal Form	Package Shape	No. of Elements	Repetitive Peak Reverse Voltage	No. of Terminals	Sub-Category	Maximum Operating Temperature	JESD-30 Code	Qualification	Maximum Holding Current	Maximum Non Repetitive Peak Forward Current	Maximum Breakdown Voltage
BR211-142	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	142 V
BR211-212	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	212 V
BR211-137	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	137 V
BR211-163	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	163 V
BR211-152	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	152 V
BR211-182	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	182 V
BR211-157	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	157 V
BR211-135	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	135 V
BR211SM-180	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA	158 V	C BEND	RECTANGULAR	1		2	Silicon Surge Protectors	70 Cel	R-PDSO-C2	Not Qualified		40 A	180 V
BR211-180	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	CERAMIC, GLASS-SEALED	150 mA	158 V	WIRE	ROUND	1		2			O-GALF-W2	Not Qualified		15 A	202 V
BR211-122	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	122 V
BR211-202	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	202 V
BR211-102	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	102 V
BR211-105	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	105 V
BR211-280T/R	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	CERAMIC, GLASS-SEALED	150 mA	246 V	WIRE	ROUND	1	246 V	2	Silicon Surge Protectors	70 Cel	O-GALF-W2	Not Qualified	150 mA	15 A	314 V
BR211-143	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	143 V
BR211-171	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	171 V
BR211-250	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	250 V
BR211-161	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	161 V
BRS212-140	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA		C BEND	RECTANGULAR	1		2			R-PDSO-C2	Not Qualified		15 A	157 V
BR211-219	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	219 V
BRS212-260	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA		C BEND	RECTANGULAR	1	228 V	2	Silicon Surge Protectors	150 Cel	R-PDSO-C2	Not Qualified		15 A	292 V
BR211-119	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	119 V
BR211-263	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	263 V
BR211-238	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	238 V
BR211-247	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	247 V
BR211-203	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	203 V
BRS212-280	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA		C BEND	RECTANGULAR	1		2			R-PDSO-C2	Not Qualified		15 A	314 V
BR211-160T/R	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	CERAMIC, GLASS-SEALED	150 mA	140 V	WIRE	ROUND	1	140 V	2	Silicon Surge Protectors	70 Cel	O-GALF-W2	Not Qualified	150 mA	15 A	180 V
BR211SM-200	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA	176 V	C BEND	RECTANGULAR	1		2	Silicon Surge Protectors	70 Cel	R-PDSO-C2	Not Qualified		40 A	200 V
BR211-245	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	245 V
BR211-109	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	109 V
BR211-229	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	229 V
BR211-223	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	223 V
BR211-222	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	222 V
BR211-204	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	204 V
BR211-208	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	208 V
BR211-176	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	176 V
BR211-101	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	101 V
BR211-136	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	136 V
BR211-165	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	165 V
BR211-111	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	111 V
BRS212-220	NXP Semiconductors	SYMMETRICAL BOD	SMALL OUTLINE	YES	DUAL	SINGLE		PLASTIC/EPOXY	150 mA		C BEND	RECTANGULAR	1	193 V	2	Silicon Surge Protectors	150 Cel	R-PDSO-C2	Not Qualified		15 A	247 V
BR211-190	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	190 V
BR211-242	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	242 V
BR211-125	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	125 V
BR211-116	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	GLASS	150 mA		WIRE	ROUND	1		2			O-LALF-W2	Not Qualified		40 A	116 V
BR211-260	NXP Semiconductors	SYMMETRICAL BOD	LONG FORM	NO	AXIAL	SINGLE	ISOLATED	CERAMIC, GLASS-SEALED	150 mA	228 V	WIRE	ROUND	1		2			O-GALF-W2	Not Qualified		15 A	292 V

Breakover Diodes

Breakover diodes, also known as break-down diodes or reference diodes, are two-terminal semiconductor devices that are designed to conduct current when a specific voltage is exceeded.

Breakover diodes have a highly doped p-n junction that allows current to flow in the reverse direction once the voltage across the diode reaches a certain threshold value. Once this voltage is exceeded, the breakover diode begins to conduct in the reverse direction, providing a low-resistance path for current flow.

Breakover diodes are commonly used in electronic circuits to protect sensitive components from voltage spikes and transients. They are often used in circuits that operate in harsh environments or that are subject to voltage surges, such as in power supplies and motor control circuits.

Breakover diodes can be used in conjunction with other components, such as capacitors and resistors, to form voltage clamping circuits that protect sensitive components from overvoltage conditions. In these circuits, the breakover diode conducts the excess voltage away from the sensitive component and dissipates it as heat.