NXP Semiconductors Breakover Diodes 199

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Manufacturers (1)
    • NXP Semiconductors
    • IXYS Corporation
    • Littelfuse
    • STMicroelectronics
Trigger Device Type
    • RVS BLOCKING BOD
    • SYMMETRICAL BOD
Package Style (Meter)
    • IN-LINE
    • LONG FORM
    • SMALL OUTLINE
Surface Mount
    • NO
    • YES
Terminal Position
    • AXIAL
    • DUAL
    • SINGLE
Configuration
    • SINGLE
Case Connection
    • ISOLATED
    • TERMINAL 2
Package Body Material
    • CERAMIC, GLASS-SEALED
    • GLASS
    • PLASTIC/EPOXY
Nominal Holding Current
    • 130 mA
    • 150 mA
    • 30 mA
Minimum Breakdown Voltage
    • 105 V
    • 1150 V
    • 123 V
    • 1350 V
    • 140 V
    • 1450 V
    • 1550 V
    • 158 V
    • 1650 V
    • 1750 V
    • 176 V
    • 1850 V
    • 193 V
    • 1950 V
    • 211 V
    • 2150 V
    • 2250 V
    • 228 V
    • 2350 V
    • 2450 V
    • 246 V
    • 2500 V
    • 2900 V
    • 3700 V
    • 3900 V
    • 4100 V
    • 550 V
    • 750 V
    • 850 V
    • 88 V
    • 950 V
Terminal Form
    • C BEND
    • THROUGH-HOLE
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
No. of Elements
    • 1
Repetitive Peak Reverse Voltage
    • 1 V
    • 108 V
    • 117 V
    • 135 V
    • 140 V
    • 144 V
    • 158 V
    • 162 V
    • 176 V
    • 180 V
    • 193 V
    • 198 V
    • 211 V
    • 216 V
    • 228 V
    • 243 V
    • 246 V
    • 56 V
    • 61 V
    • 67 V
    • 74 V
    • 82 V
    • 90 V
    • 99 V
No. of Terminals
    • 2
Sub-Category
    • Breakover Diodes
    • Silicon Surge Protectors
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 70 Cel
    • 85 Cel
Minimum Operating Temperature
    • -40 Cel
    • 0 Cel
Terminal Finish
    • TIN
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-GALF-W2
    • O-LALF-W2
    • R-PDSO-C2
    • R-PSIP-T2
Qualification
    • Not Qualified
Maximum Holding Current
    • 120 mA
    • 150 mA
    • 180 mA
    • 30 mA
Maximum Non Repetitive Peak Forward Current
    • 15 A
    • 200 A
    • 30 A
    • 40 A
JESD-609 Code
    • e0
    • e3
Maximum Time At Peak Reflow Temperature (s)
    • NOT SPECIFIED
Maximum Breakdown Voltage
    • 100 V
    • 1000 V
    • 101 V
    • 102 V
    • 103 V
    • 104 V
    • 105 V
    • 106 V
    • 107 V
    • 108 V
    • 109 V
    • 110 V
    • 111 V
    • 112 V
    • 113 V
    • 114 V
    • 115 V
    • 116 V
    • 117 V
    • 118 V
    • 119 V
    • 1200 V
    • 121 V
    • 122 V
    • 123 V
    • 124 V
    • 125 V
    • 126 V
    • 127 V
    • 128 V
    • 129 V
    • 130 V
    • 131 V
    • 132 V
    • 133 V
    • 134 V
    • 135 V
    • 136 V
    • 137 V
    • 138 V
    • 139 V
    • 140 V
    • 1400 V
    • 141 V
    • 142 V
    • 143 V
    • 144 V
    • 145 V
    • 146 V
    • 147 V
    • 148 V
    • 149 V
    • 150 V
    • 1500 V
    • 151 V
    • 152 V
    • 153 V
    • 154 V
    • 155 V
    • 156 V
    • 157 V
    • 158 V
    • 159 V
    • 160 V
    • 1600 V
    • 161 V
    • 162 V
    • 163 V
    • 164 V
    • 165 V
    • 166 V
    • 167 V
    • 168 V
    • 169 V
    • 170 V
    • 1700 V
    • 171 V
    • 172 V
    • 173 V
    • 174 V
    • 175 V
    • 176 V
    • 177 V
    • 178 V
    • 179 V
    • 180 V
    • 1800 V
    • 181 V
    • 182 V
    • 183 V
    • 184 V
    • 185 V
    • 186 V
    • 187 V
    • 188 V
    • 189 V
    • 190 V
    • 1900 V
    • 191 V
    • 192 V
    • 193 V
    • 194 V
    • 195 V
    • 196 V
    • 197 V
    • 198 V
    • 199 V
    • 200 V
    • 2000 V
    • 201 V
    • 202 V
    • 203 V
    • 204 V
    • 205 V
    • 206 V
    • 207 V
    • 208 V
    • 209 V
    • 210 V
    • 211 V
    • 212 V
    • 213 V
    • 214 V
    • 215 V
    • 216 V
    • 217 V
    • 218 V
    • 219 V
    • 220 V
    • 2200 V
    • 221 V
    • 222 V
    • 223 V
    • 224 V
    • 225 V
    • 226 V
    • 227 V
    • 228 V
    • 229 V
    • 230 V
    • 2300 V
    • 231 V
    • 232 V
    • 233 V
    • 234 V
    • 235 V
    • 236 V
    • 237 V
    • 238 V
    • 239 V
    • 240 V
    • 2400 V
    • 241 V
    • 242 V
    • 243 V
    • 244 V
    • 245 V
    • 246 V
    • 247 V
    • 248 V
    • 249 V
    • 250 V
    • 2500 V
    • 251 V
    • 252 V
    • 253 V
    • 254 V
    • 255 V
    • 256 V
    • 257 V
    • 258 V
    • 259 V
    • 260 V
    • 2600 V
    • 261 V
    • 262 V
    • 263 V
    • 264 V
    • 265 V
    • 266 V
    • 267 V
    • 268 V
    • 269 V
    • 270 V
    • 271 V
    • 272 V
    • 273 V
    • 274 V
    • 275 V
    • 276 V
    • 277 V
    • 278 V
    • 279 V
    • 280 V
    • 289 V
    • 292 V
    • 293 V
    • 3000 V
    • 314 V
    • 320 V
    • 325 V
    • 360 V
    • 3800 V
    • 4000 V
    • 4200 V
    • 50 V
    • 600 V
    • 700 V
    • 75 V
    • 800 V
    • 82 V
    • 85 V
    • 90 V
    • 900 V
    • 91 V
    • 99 V
Peak Reflow Temperature (C)
    • NOT SPECIFIED
Reset All
Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Package Body Material Nominal Holding Current Minimum Breakdown Voltage Terminal Form Package Shape No. of Elements Repetitive Peak Reverse Voltage No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Qualification Maximum Holding Current Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Maximum Breakdown Voltage Peak Reflow Temperature (C)

BR211-138

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

138 V

BR211-236

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

236 V

BRS212-240

NXP Semiconductors

SYMMETRICAL BOD

SMALL OUTLINE

YES

DUAL

SINGLE

PLASTIC/EPOXY

150 mA

C BEND

RECTANGULAR

1

211 V

2

Silicon Surge Protectors

150 Cel

R-PDSO-C2

Not Qualified

15 A

269 V

BR211-239

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

239 V

BR211-172

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

172 V

BR211-262

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

262 V

BR211-156

NXP Semiconductors

SYMMETRICAL BOD

LONG FORM

NO

AXIAL

SINGLE

ISOLATED

GLASS

150 mA

WIRE

ROUND

1

2

O-LALF-W2

Not Qualified

40 A

156 V

Breakover Diodes

Breakover diodes, also known as break-down diodes or reference diodes, are two-terminal semiconductor devices that are designed to conduct current when a specific voltage is exceeded.

Breakover diodes have a highly doped p-n junction that allows current to flow in the reverse direction once the voltage across the diode reaches a certain threshold value. Once this voltage is exceeded, the breakover diode begins to conduct in the reverse direction, providing a low-resistance path for current flow.

Breakover diodes are commonly used in electronic circuits to protect sensitive components from voltage spikes and transients. They are often used in circuits that operate in harsh environments or that are subject to voltage surges, such as in power supplies and motor control circuits.

Breakover diodes can be used in conjunction with other components, such as capacitors and resistors, to form voltage clamping circuits that protect sensitive components from overvoltage conditions. In these circuits, the breakover diode conducts the excess voltage away from the sensitive component and dissipates it as heat.