DISK BUTTON Silicon Controlled Rectifiers (SCR) 1,618

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

T1866N22TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

40000 A

UNSPECIFIED

ROUND

2611 A

1

250 mA

2200 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

4100 A

O-CXDB-X4

2.5 V

Not Qualified

2200 V

1000 V/us

300 mA

300 us

NOT SPECIFIED

NOT SPECIFIED

T1329N20TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

26500 A

UNSPECIFIED

ROUND

1329 A

1

150 mA

2000 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2600 A

O-CXDB-X4

2.2 V

Not Qualified

2000 V

1000 V/us

300 mA

300 us

T1219N28TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

25000 A

UNSPECIFIED

ROUND

1670.9 A

1

200 mA

2800 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2625 A

O-CXDB-X4

2 V

Not Qualified

2800 V

1000 V/us

500 mA

350 us

NOT SPECIFIED

NOT SPECIFIED

T3011N70TOH

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

UNSPECIFIED

350 mA

UNSPECIFIED

ROUND

1

7000 V

3

125 Cel

4400 A

O-XXDB-X3

7000 V

T1329N18TOF

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

26500 A

UNSPECIFIED

ROUND

1329 A

1

150 mA

1800 V

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2600 A

O-CXDB-X4

2.2 V

Not Qualified

1800 V

1000 V/us

300 mA

300 us

T1800N42TOFHOSA1

Infineon Technologies

SCR

DISK BUTTON

YES

UNSPECIFIED

SINGLE

1.65 V

CERAMIC, METAL-SEALED COFIRED

300 mA

41000 A

UNSPECIFIED

ROUND

2490 A

1

300 mA

4200 V

4

125 Cel

-40 Cel

2820 A

O-CXDB-X4

2.5 V

4200 V

1000 V/us

300 mA

900 us

IEC-60747-6

SG3000JX26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

2

O-CEDB-N2

Not Qualified

SF3000GX21

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

NO LEAD

ROUND

1

4000 V

250000 uA

2

125 Cel

-40 Cel

4710 A

O-CEDB-N2

3.5 V

Not Qualified

4000 V

2000 V/us

300 mA

400 us

SH400N25B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1000 V

50000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

1000 V

500 V/us

400 mA

HIGH SPEED

25 us

SH400EX26C

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

50000 uA

2

115 Cel

-40 Cel

628 A

O-CEDB-N2

2.5 V

Not Qualified

2500 V

500 V/us

300 mA

HIGH SPEED

40 us

SF1500L27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

800 V

50000 uA

2

125 Cel

-40 Cel

2355 A

O-CEDB-N2

2.5 V

Not Qualified

800 V

500 V/us

300 mA

SH200L21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

800 V

30000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

800 V

200 V/us

200 mA

HIGH SPEED

15 us

SG800EX25

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

350 mA

5000 A

NO LEAD

ROUND

400 A

2

Silicon Controlled Rectifiers

115 Cel

-40 Cel

O-CEDB-N2

2 V

Not Qualified

2500 V

SH200N21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1000 V

20000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

1000 V

200 V/us

200 mA

HIGH SPEED

80 us

SF2500EX21

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

120000 uA

2

125 Cel

-40 Cel

2355 A

O-CEDB-N2

2.5 V

Not Qualified

2500 V

1500 V/us

300 mA

400 us

SF500EX29

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

2

785 A

O-CEDB-N2

Not Qualified

2500 V

SF800N25

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

320 mA

NO LEAD

ROUND

1

1000 V

35000 uA

2

125 Cel

-40 Cel

1260 A

O-CEDB-N2

4 V

Not Qualified

1000 V

500 V/us

300 mA

SG400EX22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

500 mA

NO LEAD

ROUND

1

15 V

10000 uA

2

125 Cel

-40 Cel

150 A

O-CEDB-N2

1 V

Not Qualified

2500 V

600 V/us

PEAK TURN-OFF CURRENT IS 400A

15 us

SG600GXH26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1500 mA

4000 A

NO LEAD

ROUND

300 A

1

20 mA

16 V

20000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

300 A

O-CEDB-N2

1 V

Not Qualified

4500 V

1200 V/us

LOW SNUBBER TYPE; PEAK TURN-OFF CURRENT IS 600A

17 us

SH200U21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1600 V

20000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

1600 V

200 V/us

200 mA

HIGH SPEED

80 us

SF3000GX22

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

NO LEAD

ROUND

1

4000 V

2

125 Cel

-40 Cel

4710 A

O-CEDB-N2

Not Qualified

4000 V

NOT SPECIFIED

NOT SPECIFIED

SHR400R21

Toshiba

REVERSE CONDUCTING SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

35000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

200 V/us

500 mA

HIGH SPEED

40 us

SH400R26B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

50000 uA

2

115 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

500 V/us

300 mA

HIGH SPEED

25 us

SG400U22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

500 mA

NO LEAD

ROUND

1

15 V

10000 uA

2

125 Cel

-40 Cel

150 A

O-CEDB-N2

1 V

Not Qualified

1600 V

600 V/us

PEAK TURN-OFF CURRENT IS 400A

15 us

SH400G21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

400 V

30000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

400 V

200 V/us

300 mA

HIGH SPEED

15 us

SF250Q27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1200 V

20000 uA

2

125 Cel

-40 Cel

393 A

O-CEDB-N2

3 V

Not Qualified

1200 V

200 V/us

200 mA

SH100J21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

600 V

30000 uA

2

125 Cel

-40 Cel

157 A

O-CEDB-N2

3 V

Not Qualified

600 V

200 V/us

200 mA

HIGH SPEED

15 us

SG500FXF21

Toshiba

SYMMETRICAL GTO SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

500 mA

NO LEAD

ROUND

1

3000 V

40000 uA

2

115 Cel

-40 Cel

200 A

O-CEDB-N2

1 V

Not Qualified

3300 V

900 V/us

PEAK TURN-OFF CURRENT IS 500A

15 us

SG3000JX26G

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

3500 mA

16000 A

NO LEAD

ROUND

200 mA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

O-CEDB-N2

2.5 V

Not Qualified

6000 V

SF500FX28

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

3000 V

2

785 A

O-CEDB-N2

Not Qualified

3000 V

SG1200U23

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1500 mA

NO LEAD

ROUND

1

15 V

20000 uA

2

125 Cel

-40 Cel

400 A

O-CEDB-N2

1.2 V

Not Qualified

1600 V

900 V/us

PEAK TURN-OFF CURRENT IS 1200A

20 us

SG1000EX23

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1000 mA

NO LEAD

ROUND

1

15 V

20000 uA

2

125 Cel

-40 Cel

400 A

O-CEDB-N2

1.2 V

Not Qualified

2500 V

900 V/us

PEAK TURN-OFF CURRENT IS 1000A

18 us

SF300B27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

100 V

20000 uA

2

125 Cel

-40 Cel

470 A

O-CEDB-N2

3 V

Not Qualified

100 V

200 V/us

200 mA

SG2500FXF22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3500 mA

NO LEAD

ROUND

1

15 V

150000 uA

2

125 Cel

-40 Cel

800 A

O-CEDB-N2

1.5 V

Not Qualified

3300 V

500 V/us

PEAK TURN-OFF CURRENT IS 2500A

28 us

SG800FXF22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1000 mA

NO LEAD

ROUND

1

15 V

40000 uA

2

125 Cel

-40 Cel

300 A

O-CEDB-N2

1.2 V

Not Qualified

3300 V

900 V/us

PEAK TURN-OFF CURRENT IS 800A

18 us

SG4500GXH25

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

10000 mA

46000 A

NO LEAD

ROUND

400 A

2

Silicon Controlled Rectifiers

115 Cel

-40 Cel

O-CEDB-N2

2 V

Not Qualified

4500 V

SH400N21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1000 V

20000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

1000 V

200 V/us

300 mA

HIGH SPEED

80 us

SH400R32B

Toshiba

SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

260 mA

8000 A

UNSPECIFIED

ROUND

630 A

4

Silicon Controlled Rectifiers

115 Cel

-40 Cel

TIN LEAD

O-CEDB-X4

3.5 V

Not Qualified

1300 V

500 V/us

400 mA

e0

SG800GXH22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1000 mA

NO LEAD

ROUND

1

15 V

40000 uA

2

125 Cel

-40 Cel

300 A

O-CEDB-N2

1.2 V

Not Qualified

4500 V

900 V/us

PEAK TURN-OFF CURRENT IS 800A

18 us

SG800FXF21

Toshiba

SYMMETRICAL GTO SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

800 mA

NO LEAD

ROUND

1

3000 V

50000 uA

2

115 Cel

-40 Cel

300 A

O-CEDB-N2

1.2 V

Not Qualified

3300 V

900 V/us

PEAK TURN-OFF CURRENT IS 800A

17 us

SG3000GXH23G

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1800 mA

NO LEAD

ROUND

1

17 V

2

125 Cel

-40 Cel

1200 A

O-CEDB-N2

Not Qualified

4500 V

NOT SPECIFIED

260

SG2000EX26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3000 mA

NO LEAD

ROUND

1

16 V

50000 uA

2

125 Cel

-40 Cel

1050 A

O-CEDB-N2

1 V

Not Qualified

2500 V

1000 V/us

PEAK TURN-OFF CURRENT IS 2000A

23 us

NOT SPECIFIED

NOT SPECIFIED

SH400U21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1600 V

20000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

1600 V

200 V/us

300 mA

HIGH SPEED

80 us

SG2500GXH22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3500 mA

NO LEAD

ROUND

1

15 V

150000 uA

2

125 Cel

-40 Cel

800 A

O-CEDB-N2

1.5 V

Not Qualified

4500 V

500 V/us

PEAK TURN-OFF CURRENT IS 2500A

28 us

SG800R21

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

350 mA

NO LEAD

ROUND

1

650 V

50000 uA

2

115 Cel

-40 Cel

400 A

O-CEDB-N2

2 V

Not Qualified

1300 V

350 V/us

PEAK TURN-OFF CURRENT IS 800A

18 us

SH100F21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

300 V

30000 uA

2

125 Cel

-40 Cel

157 A

O-CEDB-N2

3 V

Not Qualified

300 V

200 V/us

200 mA

HIGH SPEED

15 us

SG1000R22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

350 mA

NO LEAD

ROUND

1

100 V

50000 uA

2

115 Cel

-40 Cel

250 A

O-CEDB-N2

2 V

Not Qualified

1300 V

350 V/us

PEAK TURN-OFF CURRENT IS 1000A

15 us

SG1500FXF22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

2000 mA

NO LEAD

ROUND

1

15 V

60000 uA

2

125 Cel

-40 Cel

600 A

O-CEDB-N2

1.2 V

Not Qualified

3300 V

500 V/us

PEAK TURN-OFF CURRENT IS 1500A

23 us

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.