Part | RoHS | Manufacturer | Trigger Device Type | Package Style (Meter) | Surface Mount | Terminal Position | Configuration | Case Connection | Maximum On-state Voltage | Package Body Material | Maximum DC Gate Trigger Current | Non Repetitive Peak On-state Current | Terminal Form | Package Shape | Maximum On-state Current | No. of Elements | Maximum Leakage Current | Repetitive Peak Reverse Voltage | Maximum Repetitive Peak Off-state Leakage Current | No. of Terminals | Sub-Category | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Maximum RMS On-state Current | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum DC Gate Trigger Voltage | Qualification | Repetitive Peak Off-state Voltage | Minimum Critical Rate of Rise of Off-state Voltage | Maximum Holding Current | Additional Features | Nominal Circuit Commutated Turn-off Time | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1500 mA |
NO LEAD |
ROUND |
1 |
15 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
400 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
2500 V |
900 V/us |
PEAK TURN-OFF CURRENT IS 1200A |
20 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
800 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
393 A |
O-CEDB-N2 |
3 V |
Not Qualified |
800 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
5000 A |
NO LEAD |
ROUND |
2500 A |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
O-CEDB-N2 |
2.5 V |
Not Qualified |
2500 V |
1500 V/us |
300 mA |
|||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
320 mA |
NO LEAD |
ROUND |
1 |
1300 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
1260 A |
O-CEDB-N2 |
4 V |
Not Qualified |
1300 V |
500 V/us |
300 mA |
|||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1200 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
628 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1200 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
400 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
470 A |
O-CEDB-N2 |
3 V |
Not Qualified |
400 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3000 mA |
NO LEAD |
ROUND |
1 |
16 V |
50000 uA |
2 |
125 Cel |
-40 Cel |
1050 A |
O-CEDB-N2 |
1 V |
Not Qualified |
2500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 2500A |
25 us |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
4000 mA |
NO LEAD |
ROUND |
1 |
17 V |
2 |
125 Cel |
-40 Cel |
1900 A |
O-CEDB-N2 |
Not Qualified |
4500 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
350 mA |
NO LEAD |
ROUND |
1 |
1250 V |
50000 uA |
2 |
115 Cel |
-40 Cel |
400 A |
O-CEDB-N2 |
2 V |
Not Qualified |
2500 V |
350 V/us |
PEAK TURN-OFF CURRENT IS 600A |
18 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1200 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
785 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1200 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SYMMETRICAL GTO SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1500 mA |
NO LEAD |
ROUND |
1 |
2000 V |
80000 uA |
2 |
115 Cel |
-40 Cel |
800 A |
O-CEDB-N2 |
1.5 V |
Not Qualified |
2500 V |
500 V/us |
PEAK TURN-OFF CURRENT IS 2000A |
23 us |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
4000 mA |
NO LEAD |
ROUND |
1 |
16 V |
100000 uA |
2 |
125 Cel |
-40 Cel |
1600 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
2500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 3000A |
30 us |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
Toshiba |
REVERSE CONDUCTING SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
300 mA |
7700 A |
NO LEAD |
ROUND |
400 A |
100 mA |
2 |
Silicon Controlled Rectifiers |
115 Cel |
-40 Cel |
O-CEDB-N2 |
3 V |
Not Qualified |
2500 V |
||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
450 mA |
NO LEAD |
ROUND |
1 |
2500 V |
120000 uA |
2 |
125 Cel |
-40 Cel |
1570 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
2500 V |
500 V/us |
300 mA |
|||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
600 V |
15000 uA |
2 |
125 Cel |
-40 Cel |
235 A |
O-CEDB-N2 |
3 V |
Not Qualified |
600 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
350 mA |
NO LEAD |
ROUND |
1 |
300 V |
50000 uA |
2 |
115 Cel |
-40 Cel |
400 A |
O-CEDB-N2 |
2 V |
Not Qualified |
600 V |
350 V/us |
PEAK TURN-OFF CURRENT IS 600A |
18 us |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
2 |
O-CEDB-N2 |
Not Qualified |
|||||||||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
UNSPECIFIED |
ROUND |
4 |
O-CEDB-X4 |
Not Qualified |
|||||||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
NO LEAD |
ROUND |
1 |
2500 V |
2 |
785 A |
O-CEDB-N2 |
Not Qualified |
2500 V |
|||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1500 mA |
NO LEAD |
ROUND |
1 |
15 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
500 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
2500 V |
900 V/us |
PEAK TURN-OFF CURRENT IS 1200A |
20 us |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
Toshiba |
REVERSE CONDUCTING GTO SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3000 mA |
NO LEAD |
ROUND |
1 |
150000 uA |
2 |
125 Cel |
-40 Cel |
1200 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
4500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 3000A |
30 us |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1200 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
157 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1200 V |
200 V/us |
200 mA |
|||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1500 mA |
NO LEAD |
ROUND |
1 |
15 V |
20000 uA |
2 |
125 Cel |
-40 Cel |
400 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
1800 V |
900 V/us |
PEAK TURN-OFF CURRENT IS 1200A |
20 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
400 mA |
30000 A |
UNSPECIFIED |
ROUND |
2360 A |
1 |
120 mA |
4000 V |
120000 uA |
4 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
2355 A |
O-CEDB-X4 |
3.5 V |
Not Qualified |
4000 V |
1500 V/us |
300 mA |
400 us |
||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
UNSPECIFIED |
ROUND |
4 |
O-CEDB-X4 |
Not Qualified |
|||||||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
260 mA |
NO LEAD |
ROUND |
1 |
1300 V |
2 |
630 A |
O-CEDB-N2 |
Not Qualified |
1300 V |
|||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
300 mA |
17500 A |
NO LEAD |
ROUND |
800 A |
1 |
100 mA |
4000 V |
100000 uA |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
1260 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
4000 V |
1000 V/us |
300 mA |
150 us |
||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
100 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
785 A |
O-CEDB-N2 |
3 V |
Not Qualified |
100 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
2500 mA |
NO LEAD |
ROUND |
1 |
15 V |
50000 uA |
2 |
125 Cel |
-40 Cel |
700 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
1300 V |
500 V/us |
PEAK TURN-OFF CURRENT IS 2000A |
23 us |
||||||||||||||||
|
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3500 mA |
NO LEAD |
ROUND |
1 |
16 V |
100000 uA |
2 |
125 Cel |
-40 Cel |
1200 A |
O-CEDB-N2 |
1.5 V |
Not Qualified |
4500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 4000A |
32 us |
NOT SPECIFIED |
260 |
|||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
700 mA |
NO LEAD |
ROUND |
1 |
15 V |
10000 uA |
2 |
125 Cel |
-40 Cel |
200 A |
O-CEDB-N2 |
1 V |
Not Qualified |
2500 V |
600 V/us |
PEAK TURN-OFF CURRENT IS 700A |
16 us |
||||||||||||||||
Toshiba |
REVERSE CONDUCTING GTO SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
2 |
O-CEDB-N2 |
Not Qualified |
|||||||||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3500 mA |
NO LEAD |
ROUND |
1 |
16 V |
100000 uA |
2 |
125 Cel |
-40 Cel |
1200 A |
O-CEDB-N2 |
1.5 V |
Not Qualified |
4500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 3000A |
30 us |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
10000 mA |
NO LEAD |
ROUND |
1 |
17 V |
2 |
125 Cel |
-40 Cel |
2700 A |
O-CEDB-N2 |
Not Qualified |
6000 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
1500 mA |
NO LEAD |
ROUND |
1000 A |
1 |
500 V |
80000 uA |
2 |
Silicon Controlled Rectifiers |
115 Cel |
-40 Cel |
1000 A |
O-CEDB-N2 |
1.5 V |
Not Qualified |
2500 V |
500 V/us |
PEAK TURN-OFF CURRENT IS 2000A |
23 us |
||||||||||||||
Toshiba |
REVERSE CONDUCTING GTO SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
4000 mA |
NO LEAD |
ROUND |
1 |
100000 uA |
2 |
125 Cel |
-40 Cel |
1400 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
2500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 3000A |
24 us |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
2 |
O-CEDB-N2 |
Not Qualified |
|||||||||||||||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
NO LEAD |
ROUND |
1 |
2000 V |
50000 uA |
2 |
125 Cel |
-40 Cel |
785 A |
O-CEDB-N2 |
2.5 V |
Not Qualified |
2000 V |
500 V/us |
300 mA |
400 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1300 V |
25000 uA |
2 |
125 Cel |
-40 Cel |
628 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1300 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
8000 A |
NO LEAD |
ROUND |
500 A |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
O-CEDB-N2 |
2.5 V |
Not Qualified |
3000 V |
500 V/us |
300 mA |
|||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
700 mA |
NO LEAD |
ROUND |
1 |
15 V |
40000 uA |
2 |
125 Cel |
-40 Cel |
200 A |
O-CEDB-N2 |
1 V |
Not Qualified |
4500 V |
900 V/us |
PEAK TURN-OFF CURRENT IS 500A |
15 us |
||||||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
250 mA |
8000 A |
NO LEAD |
ROUND |
500 A |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
O-CEDB-N2 |
2.5 V |
Not Qualified |
2500 V |
500 V/us |
300 mA |
|||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
CERAMIC, METAL-SEALED COFIRED |
14000 A |
NO LEAD |
ROUND |
50 mA |
2 |
Silicon Controlled Rectifiers |
115 Cel |
-40 Cel |
O-CEDB-N2 |
3 V |
Not Qualified |
2500 V |
||||||||||||||||||||||
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
4000 mA |
30000 A |
UNSPECIFIED |
ROUND |
2000 A |
1 |
100 mA |
16 V |
100000 uA |
4 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
2000 A |
O-CEDB-X4 |
1.5 V |
Not Qualified |
2500 V |
1000 V/us |
LOW SNUBBER TYPE; PEAK TURN-OFF CURRENT IS 4000A |
32 us |
||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
150 mA |
NO LEAD |
ROUND |
1 |
1300 V |
35000 uA |
2 |
125 Cel |
-40 Cel |
785 A |
O-CEDB-N2 |
3 V |
Not Qualified |
1300 V |
200 V/us |
300 mA |
150 us |
||||||||||||||||
Toshiba |
REVERSE CONDUCTING GTO SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3000 mA |
16000 A |
NO LEAD |
ROUND |
1200 A |
1 |
150 mA |
150000 uA |
2 |
Silicon Controlled Rectifiers |
125 Cel |
-40 Cel |
1200 A |
O-CEDB-N2 |
1.2 V |
Not Qualified |
4500 V |
1000 V/us |
PEAK TURN-OFF CURRENT IS 3000A |
33 us |
|||||||||||||
Toshiba |
SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
260 mA |
NO LEAD |
ROUND |
1 |
1300 V |
50000 uA |
2 |
115 Cel |
-40 Cel |
630 A |
O-CEDB-N2 |
3.5 V |
Not Qualified |
1300 V |
500 V/us |
400 mA |
HIGH SPEED |
25 us |
|||||||||||||||
|
Toshiba |
GATE TURN-OFF SCR |
DISK BUTTON |
YES |
END |
SINGLE |
CERAMIC, METAL-SEALED COFIRED |
3500 mA |
NO LEAD |
ROUND |
1 |
17 V |
2 |
125 Cel |
-40 Cel |
1200 A |
O-CEDB-N2 |
Not Qualified |
4500 V |
NOT SPECIFIED |
260 |
Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.
SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.
SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.
SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.
Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.