END Silicon Controlled Rectifiers (SCR) 325

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

T2480N2800

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2800 V

4

5100 A

O-CEDB-N4

Not Qualified

2800 V

T600F12TKC

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

500 V/us

.25 mA

T600F12TGL

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

50 V/us

.25 mA

T600F13TEM

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

500 V/us

.25 mA

T1601N36TOFXPSA1

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

UNSPECIFIED

ROUND

1

3600 V

4

125 Cel

3450 A

O-CEDB-X4

3600 V

T600F12TKM

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

500 V/us

.25 mA

T719N14TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

14500 A

NO LEAD

ROUND

719 A

1

80 mA

1400 V

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1500 A

O-CEDB-N2

1.5 V

Not Qualified

1400 V

1000 V/us

300 mA

250 us

T588N18TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

1800 V

2

1250 A

O-CEDB-N2

Not Qualified

1800 V

T719N16TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

14500 A

NO LEAD

ROUND

719 A

1

80 mA

1600 V

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1500 A

O-CEDB-N2

1.5 V

Not Qualified

1600 V

1000 V/us

300 mA

250 us

T719N06TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

14500 A

NO LEAD

ROUND

719 A

1

80 mA

600 V

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1500 A

O-CEDB-N2

1.5 V

Not Qualified

600 V

1000 V/us

300 mA

250 us

T600F12TKB

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

50 V/us

.25 mA

T929N3200

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

3200 V

4

2200 A

O-CEDB-N4

Not Qualified

3200 V

T929N3000

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

3000 V

4

2200 A

O-CEDB-N4

Not Qualified

3000 V

T718N06TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

14500 A

NO LEAD

ROUND

719 A

1

80 mA

600 V

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1500 A

O-CEDB-N2

1.5 V

Not Qualified

600 V

1000 V/us

300 mA

250 us

T600F13TKL

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

50 V/us

.25 mA

T600F12TFB

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

50 V/us

.25 mA

T600F13TFL

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

50 V/us

.25 mA

T600F12TEC

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

500 V/us

.25 mA

T2851N42TOHXPSA1

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

350 mA

UNSPECIFIED

ROUND

1

4200 V

4

6500 A

O-CEDB-X4

4200 V

NOT SPECIFIED

NOT SPECIFIED

T600F13TKB

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

50 V/us

.25 mA

T2480N2600

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2600 V

4

5100 A

O-CEDB-N4

Not Qualified

2600 V

T600F13TGM

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

500 V/us

.25 mA

T600F13TGC

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

500 V/us

.25 mA

T2480N2200

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2200 V

4

5100 A

O-CEDB-N4

Not Qualified

2200 V

T600F12TGM

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

500 V/us

.25 mA

T2160N20TOFVT

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

UNSPECIFIED

ROUND

1

2000 V

4

4600 A

O-CEDB-X4

2000 V

T2160N2800

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

NO LEAD

ROUND

1

2800 V

4

4600 A

O-CEDB-N4

Not Qualified

2800 V

T719N10TOF

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

14500 A

NO LEAD

ROUND

719 A

1

80 mA

1000 V

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1500 A

O-CEDB-N2

1.5 V

Not Qualified

1000 V

1000 V/us

300 mA

250 us

T600F13TGB

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

50 V/us

.25 mA

T600F13TKM

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1300 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1300 V

500 V/us

.25 mA

T600F12TKL

Infineon Technologies

SCR

DISK BUTTON

YES

END

SINGLE

1.66 V

CERAMIC, METAL-SEALED COFIRED

.25 mA

11.3 A

NO LEAD

ROUND

960 A

1

.1 mA

1200 V

2

125 Cel

-40 Cel

1500 A

O-CEDB-N2

2.2 V

1200 V

50 V/us

.25 mA

SG3000JX26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

2

O-CEDB-N2

Not Qualified

SF3000GX21

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

NO LEAD

ROUND

1

4000 V

250000 uA

2

125 Cel

-40 Cel

4710 A

O-CEDB-N2

3.5 V

Not Qualified

4000 V

2000 V/us

300 mA

400 us

SH400N25B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1000 V

50000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

1000 V

500 V/us

400 mA

HIGH SPEED

25 us

SH400EX26C

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

50000 uA

2

115 Cel

-40 Cel

628 A

O-CEDB-N2

2.5 V

Not Qualified

2500 V

500 V/us

300 mA

HIGH SPEED

40 us

SF1500L27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

800 V

50000 uA

2

125 Cel

-40 Cel

2355 A

O-CEDB-N2

2.5 V

Not Qualified

800 V

500 V/us

300 mA

SH200L21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

800 V

30000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

800 V

200 V/us

200 mA

HIGH SPEED

15 us

SG800EX25

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

350 mA

5000 A

NO LEAD

ROUND

400 A

2

Silicon Controlled Rectifiers

115 Cel

-40 Cel

O-CEDB-N2

2 V

Not Qualified

2500 V

SH200N21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1000 V

20000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

1000 V

200 V/us

200 mA

HIGH SPEED

80 us

SF2500EX21

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

120000 uA

2

125 Cel

-40 Cel

2355 A

O-CEDB-N2

2.5 V

Not Qualified

2500 V

1500 V/us

300 mA

400 us

SF500EX29

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

2

785 A

O-CEDB-N2

Not Qualified

2500 V

SF800N25

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

320 mA

NO LEAD

ROUND

1

1000 V

35000 uA

2

125 Cel

-40 Cel

1260 A

O-CEDB-N2

4 V

Not Qualified

1000 V

500 V/us

300 mA

SG400EX22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

500 mA

NO LEAD

ROUND

1

15 V

10000 uA

2

125 Cel

-40 Cel

150 A

O-CEDB-N2

1 V

Not Qualified

2500 V

600 V/us

PEAK TURN-OFF CURRENT IS 400A

15 us

SG600GXH26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1500 mA

4000 A

NO LEAD

ROUND

300 A

1

20 mA

16 V

20000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

300 A

O-CEDB-N2

1 V

Not Qualified

4500 V

1200 V/us

LOW SNUBBER TYPE; PEAK TURN-OFF CURRENT IS 600A

17 us

SH200U21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1600 V

20000 uA

2

125 Cel

-40 Cel

314 A

O-CEDB-N2

3 V

Not Qualified

1600 V

200 V/us

200 mA

HIGH SPEED

80 us

SF3000GX22

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

NO LEAD

ROUND

1

4000 V

2

125 Cel

-40 Cel

4710 A

O-CEDB-N2

Not Qualified

4000 V

NOT SPECIFIED

NOT SPECIFIED

SHR400R21

Toshiba

REVERSE CONDUCTING SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

35000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

200 V/us

500 mA

HIGH SPEED

40 us

SH400R26B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

50000 uA

2

115 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

500 V/us

300 mA

HIGH SPEED

25 us

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.