END Silicon Controlled Rectifiers (SCR) 325

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Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features Nominal Circuit Commutated Turn-off Time JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

SF1500GX22

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

400 mA

30000 A

UNSPECIFIED

ROUND

2360 A

1

120 mA

4000 V

120000 uA

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2355 A

O-CEDB-X4

3.5 V

Not Qualified

4000 V

1500 V/us

300 mA

400 us

SG3000EXH24

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

UNSPECIFIED

ROUND

4

O-CEDB-X4

Not Qualified

SH400R28B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

2

630 A

O-CEDB-N2

Not Qualified

1300 V

SF800GX24

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

300 mA

17500 A

NO LEAD

ROUND

800 A

1

100 mA

4000 V

100000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1260 A

O-CEDB-N2

3.5 V

Not Qualified

4000 V

1000 V/us

300 mA

150 us

SF500B27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

100 V

25000 uA

2

125 Cel

-40 Cel

785 A

O-CEDB-N2

3 V

Not Qualified

100 V

200 V/us

300 mA

150 us

SG2000R22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

2500 mA

NO LEAD

ROUND

1

15 V

50000 uA

2

125 Cel

-40 Cel

700 A

O-CEDB-N2

1.2 V

Not Qualified

1300 V

500 V/us

PEAK TURN-OFF CURRENT IS 2000A

23 us

SG4000GXH26G

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3500 mA

NO LEAD

ROUND

1

16 V

100000 uA

2

125 Cel

-40 Cel

1200 A

O-CEDB-N2

1.5 V

Not Qualified

4500 V

1000 V/us

PEAK TURN-OFF CURRENT IS 4000A

32 us

NOT SPECIFIED

260

SG700EX22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

700 mA

NO LEAD

ROUND

1

15 V

10000 uA

2

125 Cel

-40 Cel

200 A

O-CEDB-N2

1 V

Not Qualified

2500 V

600 V/us

PEAK TURN-OFF CURRENT IS 700A

16 us

SGR3500GXH29

Toshiba

REVERSE CONDUCTING GTO SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

2

O-CEDB-N2

Not Qualified

SG3000GXH24

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3500 mA

NO LEAD

ROUND

1

16 V

100000 uA

2

125 Cel

-40 Cel

1200 A

O-CEDB-N2

1.5 V

Not Qualified

4500 V

1000 V/us

PEAK TURN-OFF CURRENT IS 3000A

30 us

NOT SPECIFIED

NOT SPECIFIED

SG6000JX27

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

10000 mA

NO LEAD

ROUND

1

17 V

2

125 Cel

-40 Cel

2700 A

O-CEDB-N2

Not Qualified

6000 V

NOT SPECIFIED

NOT SPECIFIED

SG2000EX21

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1500 mA

NO LEAD

ROUND

1000 A

1

500 V

80000 uA

2

Silicon Controlled Rectifiers

115 Cel

-40 Cel

1000 A

O-CEDB-N2

1.5 V

Not Qualified

2500 V

500 V/us

PEAK TURN-OFF CURRENT IS 2000A

23 us

SGR3000EX26

Toshiba

REVERSE CONDUCTING GTO SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

4000 mA

NO LEAD

ROUND

1

100000 uA

2

125 Cel

-40 Cel

1400 A

O-CEDB-N2

1.2 V

Not Qualified

2500 V

1000 V/us

PEAK TURN-OFF CURRENT IS 3000A

24 us

NOT SPECIFIED

NOT SPECIFIED

SG800JXH25

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

2

O-CEDB-N2

Not Qualified

SF500Y25

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2000 V

50000 uA

2

125 Cel

-40 Cel

785 A

O-CEDB-N2

2.5 V

Not Qualified

2000 V

500 V/us

300 mA

400 us

SF400R27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1300 V

25000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3 V

Not Qualified

1300 V

200 V/us

300 mA

150 us

SF500FX32

Toshiba

SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

250 mA

8000 A

NO LEAD

ROUND

500 A

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

O-CEDB-N2

2.5 V

Not Qualified

3000 V

500 V/us

300 mA

SG500GXH22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

700 mA

NO LEAD

ROUND

1

15 V

40000 uA

2

125 Cel

-40 Cel

200 A

O-CEDB-N2

1 V

Not Qualified

4500 V

900 V/us

PEAK TURN-OFF CURRENT IS 500A

15 us

SF500EX33

Toshiba

SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

250 mA

8000 A

NO LEAD

ROUND

500 A

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

O-CEDB-N2

2.5 V

Not Qualified

2500 V

500 V/us

300 mA

SG1400EX25

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

14000 A

NO LEAD

ROUND

50 mA

2

Silicon Controlled Rectifiers

115 Cel

-40 Cel

O-CEDB-N2

3 V

Not Qualified

2500 V

SG4000EX26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

4000 mA

30000 A

UNSPECIFIED

ROUND

2000 A

1

100 mA

16 V

100000 uA

4

Silicon Controlled Rectifiers

125 Cel

-40 Cel

2000 A

O-CEDB-X4

1.5 V

Not Qualified

2500 V

1000 V/us

LOW SNUBBER TYPE; PEAK TURN-OFF CURRENT IS 4000A

32 us

SF500R27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1300 V

35000 uA

2

125 Cel

-40 Cel

785 A

O-CEDB-N2

3 V

Not Qualified

1300 V

200 V/us

300 mA

150 us

SGR3000GXH28

Toshiba

REVERSE CONDUCTING GTO SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3000 mA

16000 A

NO LEAD

ROUND

1200 A

1

150 mA

150000 uA

2

Silicon Controlled Rectifiers

125 Cel

-40 Cel

1200 A

O-CEDB-N2

1.2 V

Not Qualified

4500 V

1000 V/us

PEAK TURN-OFF CURRENT IS 3000A

33 us

SH400R25B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

50000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

500 V/us

400 mA

HIGH SPEED

25 us

SG4000GXH29G

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

3500 mA

NO LEAD

ROUND

1

17 V

2

125 Cel

-40 Cel

1200 A

O-CEDB-N2

Not Qualified

4500 V

NOT SPECIFIED

260

SH400R29B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

2

628 A

O-CEDB-N2

Not Qualified

1300 V

SH400D21A

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

200 V

30000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

200 V

200 V/us

300 mA

HIGH SPEED

15 us

SG6000GXH26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1500 mA

NO LEAD

ROUND

1

16 V

2

125 Cel

-40 Cel

300 A

O-CEDB-N2

Not Qualified

4500 V

NOT SPECIFIED

NOT SPECIFIED

SG2000EXH26

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

UNSPECIFIED

ROUND

4

O-CEDB-X4

Not Qualified

SF500EX25

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

250 mA

NO LEAD

ROUND

1

2500 V

50000 uA

2

125 Cel

-40 Cel

785 A

O-CEDB-N2

2.5 V

Not Qualified

2500 V

500 V/us

300 mA

400 us

SG800EX24

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

700 mA

NO LEAD

ROUND

1

15 V

2

125 Cel

-40 Cel

360 A

O-CEDB-N2

Not Qualified

2500 V

PEAK TURN-OFF CURRENT IS 800A

NOT SPECIFIED

NOT SPECIFIED

SG2500GXH21

Toshiba

SYMMETRICAL GTO SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

2500 mA

NO LEAD

ROUND

1

4000 V

150000 uA

2

115 Cel

-40 Cel

800 A

O-CEDB-N2

1.5 V

Not Qualified

4500 V

900 V/us

80 mA

PEAK TURN-OFF CURRENT IS 2500A

20 us

SH400EX33C

Toshiba

SCR

DISK BUTTON

YES

END

CERAMIC, METAL-SEALED COFIRED

250 mA

8000 A

UNSPECIFIED

ROUND

628 A

4

Silicon Controlled Rectifiers

115 Cel

-40 Cel

TIN LEAD

O-CEDB-X4

2.5 V

Not Qualified

2500 V

500 V/us

300 mA

e0

SF1500GX21

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

400 mA

NO LEAD

ROUND

1

120000 uA

2

O-CEDB-N2

3.5 V

Not Qualified

4000 V

1500 V/us

300 mA

400 us

SG1400EX21

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1000 mA

NO LEAD

ROUND

1

500 V

50000 uA

2

115 Cel

-40 Cel

700 A

O-CEDB-N2

1.5 V

Not Qualified

2500 V

500 V/us

PEAK TURN-OFF CURRENT IS 1400A

25 us

SG1500W22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

2000 mA

NO LEAD

ROUND

1

15 V

40000 uA

2

125 Cel

-40 Cel

550 A

O-CEDB-N2

1 V

Not Qualified

1800 V

1000 V/us

PEAK TURN-OFF CURRENT IS 1500A

22 us

SF500G27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

400 V

25000 uA

2

125 Cel

-40 Cel

785 A

O-CEDB-N2

3 V

Not Qualified

400 V

200 V/us

300 mA

150 us

SF150B27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

100 V

15000 uA

2

125 Cel

-40 Cel

235 A

O-CEDB-N2

3 V

Not Qualified

100 V

200 V/us

200 mA

SF800L25

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

320 mA

NO LEAD

ROUND

1

800 V

35000 uA

2

125 Cel

-40 Cel

1260 A

O-CEDB-N2

4 V

Not Qualified

800 V

500 V/us

300 mA

SF400N27

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1000 V

25000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3 V

Not Qualified

1000 V

200 V/us

300 mA

150 us

SH400L25B

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

800 V

50000 uA

2

115 Cel

-40 Cel

630 A

O-CEDB-N2

3.5 V

Not Qualified

800 V

500 V/us

400 mA

HIGH SPEED

25 us

SF800U29

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

320 mA

NO LEAD

ROUND

1

1600 V

2

1260 A

O-CEDB-N2

Not Qualified

1600 V

SG1000U23

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

1000 mA

NO LEAD

ROUND

1

15 V

20000 uA

2

125 Cel

-40 Cel

400 A

O-CEDB-N2

1.2 V

Not Qualified

1600 V

900 V/us

PEAK TURN-OFF CURRENT IS 1000A

18 us

SF1500EX24

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

450 mA

NO LEAD

ROUND

1

2500 V

120000 uA

2

125 Cel

-40 Cel

2355 A

O-CEDB-N2

3.5 V

Not Qualified

2500 V

500 V/us

300 mA

400 us

SH100Q21D

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

150 mA

NO LEAD

ROUND

1

1200 V

15000 uA

2

125 Cel

-40 Cel

157 A

O-CEDB-N2

3 V

Not Qualified

1200 V

200 V/us

200 mA

HIGH SPEED

80 us

SF800N26

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

320 mA

NO LEAD

ROUND

1

1000 V

35000 uA

2

125 Cel

-40 Cel

1260 A

O-CEDB-N2

4 V

Not Qualified

1000 V

500 V/us

300 mA

SG700W22

Toshiba

GATE TURN-OFF SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

700 mA

NO LEAD

ROUND

1

15 V

10000 uA

2

125 Cel

-40 Cel

200 A

O-CEDB-N2

1 V

Not Qualified

1800 V

600 V/us

PEAK TURN-OFF CURRENT IS 700A

16 us

SF400R26

Toshiba

SCR

DISK BUTTON

YES

END

SINGLE

CERAMIC, METAL-SEALED COFIRED

260 mA

NO LEAD

ROUND

1

1300 V

20000 uA

2

125 Cel

-40 Cel

628 A

O-CEDB-N2

3.5 V

Not Qualified

1300 V

200 V/us

300 mA

150 us

Silicon Controlled Rectifiers (SCR)

Silicon Controlled Rectifiers (SCRs) are semiconductor devices that are used to control the flow of electrical current in high-power applications. They are also known as thyristors, which are a family of devices that includes SCRs, triacs, and diacs.

SCRs consist of four layers of alternating p-type and n-type semiconductor material, forming three p-n junctions. The device has three terminals: the anode (A), the cathode (K), and the gate (G). The SCR is designed to conduct current only in one direction, from the anode to the cathode.

SCRs work by applying a positive voltage to the anode, which causes current to flow into the device. The gate terminal is used to control the flow of current by applying a small voltage pulse to trigger the device. Once triggered, the SCR conducts current until the voltage across the device drops below a certain level, at which point it turns off.

SCRs are commonly used in high-power applications such as motor control, lighting control, and power supplies. They are often used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits.

Proper selection and use of SCRs are critical to ensure safe and reliable operation of power control circuits. Factors such as the maximum voltage rating, maximum current rating, and operating temperature range should be considered when selecting an SCR for a particular application.