BOTTOM Triode For Alternating Current (TRIAC) 542

  1. Home
  2. Triode For Alternating Current (TRIAC)
Manufacturers
    • Bourns
    • Continental Device India
    • Diodes Incorporated
    • Fagor Electronica S Coop
    • Fairchild Semiconductor
    • Harris Semiconductor
    • Hbcontrols
    • Hutson Industries
    • Infineon Technologies
    • Littelfuse
    • Loras Industries
    • Motorola
    • NXP Semiconductors
    • Nte Electronics
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Sansha Electric Mfg
    • Texas Instruments
    • Toshiba
    • Ween Semiconductors
Trigger Device Type
    • 4 QUADRANT LOGIC LEVEL TRIAC
    • ALTERNISTOR TRIAC
    • SNUBBERLESS TRIAC
    • TRIAC
    • TRIAC WITH INT TRIGGER
Package Style (Meter)
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • IN-LINE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Surface Mount
    • NO
    • YES
Terminal Position (1)
    • BOTTOM
    • DUAL
    • SINGLE
    • UNSPECIFIED
    • UPPER
Configuration
    • COMMON MAIN TERMINAL 1, 3 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 4 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN TRIGGER ELEMENT IN SERIES WITH GATE
    • SINGLE WITH BUILT-IN ZENER DIODE
Case Connection
    • ISOLATED
    • MAIN TERMINAL 1
    • MAIN TERMINAL 2
Maximum On-state Voltage
    • 1.3 V
    • 1.4 V
    • 1.5 V
    • 1.55 V
    • 1.6 V
    • 1.65 V
    • 1.7 V
    • 1.75 V
    • 1.8 V
    • 1.9 V
    • 2 V
    • 2.1 V
    • 2.6 V
    • 50 V
Package Body Material
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Maximum DC Gate Trigger Current
    • .2 mA
    • 1 mA
    • 10 mA
    • 100 mA
    • 10000 mA
    • 12 mA
    • 120 mA
    • 125 mA
    • 15 mA
    • 150 mA
    • 2 mA
    • 20 mA
    • 200 mA
    • 240 mA
    • 25 mA
    • 3 mA
    • 30 mA
    • 300 mA
    • 35 mA
    • 35000 mA
    • 40 mA
    • 45 mA
    • 5 mA
    • 50 mA
    • 500 mA
    • 5000 mA
    • 50000 mA
    • 5000000000 mA
    • 60 mA
    • 7 mA
    • 70 mA
    • 75 mA
    • 8 mA
    • 80 mA
    • 8000 mA
Non Repetitive Peak On-state Current
    • 11 A
    • 110 A
    • 120 A
    • 150 A
    • 20 A
    • 224 A
    • 225 A
    • 250 A
    • 260 A
    • 300 A
    • 315 A
    • 330 A
    • 350 A
    • 370 A
    • 650 A
    • 7.6 A
    • 8 A
    • 8.8 A
    • 90 A
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • SOLDER LUG
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Maximum On-state Current
    • .2 A
    • .8 A
    • 1 A
    • 10 A
    • 2 A
    • 6 A
    • 8 A
No. of Elements
    • 1
    • 2
    • 3
    • 4
Maximum Leakage Current
    • .0005 mA
    • .001 mA
    • .005 mA
    • .01 mA
    • .02 mA
    • .05 mA
    • .1 mA
    • .11 mA
    • .2 mA
    • .5 mA
    • .75 mA
    • 1 mA
    • 1.2 mA
    • 1.5 mA
    • 10 mA
    • 100 mA
    • 1000 mA
    • 15 mA
    • 2 mA
    • 2.2 mA
    • 2.5 mA
    • 2.7 mA
    • 25 mA
    • 3 mA
    • 3000 mA
    • 4 mA
    • 4.2 mA
    • 45 mA
    • 5 mA
    • 5.5 mA
    • 500 mA
    • 5000 mA
    • 6 mA
    • 7.4 mA
    • 8 mA
    • 8.5 mA
Repetitive Peak Reverse Voltage
    • 1000 V
    • 1200 V
    • 250 V
    • 400 V
    • 600 V
    • 800 V
Maximum Repetitive Peak Off-state Leakage Current
    • .1 uA
    • 1 uA
    • 10 uA
    • 100 uA
    • 1000 uA
    • 1500 uA
    • 2 uA
    • 20 uA
    • 200 uA
    • 2000 uA
    • 3000 uA
    • 5 uA
    • 50 uA
    • 500 uA
    • 6000 uA
No. of Terminals
    • 2
    • 20
    • 3
    • 4
    • 6
    • 8
Sub-Category
    • Silicon Controlled Rectifiers
    • TRIACs
Maximum Operating Temperature
    • 100 Cel
    • 105 Cel
    • 110 Cel
    • 115 Cel
    • 120 Cel
    • 125 Cel
    • 150 Cel
Minimum Operating Temperature
    • -10 Cel
    • -20 Cel
    • -25 Cel
    • -30 Cel
    • -40 Cel
    • -45 Cel
    • -50 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
    • 0 Cel
Terminal Finish
    • BRIGHT TIN
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/SILVER
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL
    • NICKEL PALLADIUM GOLD
    • NICKEL PALLADIUM GOLD SILVER
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN OVER COPPER
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin (Sn) over Copper (Cu)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
Maximum RMS On-state Current
    • .2 A
    • .3 A
    • .4 A
    • .45 A
    • .5 A
    • .6 A
    • .8 A
    • .95 A
    • 1 A
    • 1.5 A
    • 1.6 A
    • 10 A
    • 100 A
    • 12 A
    • 12.6 A
    • 15 A
    • 150 A
    • 16 A
    • 2 A
    • 2.5 A
    • 20 A
    • 220 A
    • 25 A
    • 26 A
    • 27 A
    • 3 A
    • 30 A
    • 35 A
    • 4 A
    • 40 A
    • 45 A
    • 5 A
    • 50 A
    • 6 A
    • 60 A
    • 66 A
    • 8 A
    • 80 A
    • 800 A
JESD-30 Code
    • O-CXDB-X3
    • O-MBCY-W3
    • O-MBFM-P2
    • O-MUPM-D2
    • O-PBCY-T3
    • O-PBCY-W3
    • O-PUFM-D3
    • R-PBCY-T3
    • R-PDIP-T20
    • R-PDIP-T3
    • R-PDIP-T4
    • R-PDIP-T8
    • R-PDSO-C3
    • R-PDSO-F3
    • R-PDSO-G2
    • R-PDSO-G20
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G8
    • R-PSFM-D3
    • R-PSFM-G2
    • R-PSFM-G3
    • R-PSFM-T2
    • R-PSFM-T3
    • R-PSFM-X3
    • R-PSIP-T2
    • R-PSIP-T3
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-G2
    • R-PSSO-G3
    • R-PUFM-D3
    • R-PUFM-X3
    • R-PUFM-X6
    • R-XUFM-X3
    • S-PUFM-D3
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • 3
    • NOT APPLICABLE
Maximum DC Gate Trigger Voltage
    • .8 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.3 V
    • 1.5 V
    • 1.6 V
    • 1.7 V
    • 2 V
    • 2.2 V
    • 2.3 V
    • 2.5 V
    • 2.75 V
    • 3 V
    • 3.4 V
    • 3.5 V
    • 4 V
    • 5 V
Qualification
    • Not Qualified
Repetitive Peak Off-state Voltage
    • 100 V
    • 1000 V
    • 1200 V
    • 1500 V
    • 200 V
    • 250 V
    • 300 V
    • 400 V
    • 450 V
    • 500 V
    • 600 V
    • 700 V
    • 800 V
Minimum Critical Rate of Rise of Commutation Voltage
    • .00001 V/us
    • .43 V/us
    • .5 V/us
    • .75 V/us
    • 1 V/us
    • 1.3 V/us
    • 1.5 V/us
    • 1.8 V/us
    • 10 V/us
    • 100 V/us
    • 11 V/us
    • 12 V/us
    • 13 V/us
    • 14 V/us
    • 15 V/us
    • 150 V/us
    • 16 V/us
    • 18 V/us
    • 2 V/us
    • 2.2 V/us
    • 2.7 V/us
    • 20 V/us
    • 21 V/us
    • 22 V/us
    • 25 V/us
    • 250 V/us
    • 28 V/us
    • 3 V/us
    • 3.5 V/us
    • 3.8 V/us
    • 30 V/us
    • 300 V/us
    • 4 V/us
    • 4.5 V/us
    • 40 V/us
    • 5 V/us
    • 5.5 V/us
    • 50 V/us
    • 500 V/us
    • 6 V/us
    • 6.5 V/us
    • 7 V/us
    • 75 V/us
    • 8 V/us
    • 8.5 V/us
    • 80 V/us
    • 9 V/us
Minimum Critical Rate of Rise of Off-state Voltage
    • .00001 V/us
    • .0001 V/us
    • .0002 V/us
    • .0005 V/us
    • .5 V/us
    • 10 V/us
    • 100 V/us
    • 1000 V/us
    • 1150 V/us
    • 120 V/us
    • 125 V/us
    • 1250 V/us
    • 15 V/us
    • 150 V/us
    • 1500 V/us
    • 175 V/us
    • 1800 V/us
    • 2 V/us
    • 20 V/us
    • 200 V/us
    • 2000 V/us
    • 225 V/us
    • 25 V/us
    • 250 V/us
    • 2500 V/us
    • 275 V/us
    • 30 V/us
    • 300 V/us
    • 35 V/us
    • 350 V/us
    • 375 V/us
    • 40 V/us
    • 400 V/us
    • 4000 V/us
    • 425 V/us
    • 45 V/us
    • 450 V/us
    • 46 V/us
    • 475 V/us
    • 5 V/us
    • 50 V/us
    • 500 V/us
    • 520 V/us
    • 575 V/us
    • 60 V/us
    • 600 V/us
    • 625 V/us
    • 650 V/us
    • 70 V/us
    • 700 V/us
    • 75 V/us
    • 750 V/us
    • 775 V/us
    • 80 V/us
    • 85 V/us
    • 850 V/us
    • 925 V/us
Maximum Holding Current
    • 10 mA
    • 100 mA
    • 12 mA
    • 120 mA
    • 13 mA
    • 15 mA
    • 150 mA
    • 20 mA
    • 200 mA
    • 2000 mA
    • 25 mA
    • 3 mA
    • 30 mA
    • 300 mA
    • 35 mA
    • 40 mA
    • 45 mA
    • 5 mA
    • 50 mA
    • 50000 mA
    • 6 mA
    • 60 mA
    • 7 mA
    • 70 mA
    • 75 mA
    • 8 mA
    • 80 mA
    • 80000 mA
    • 90 mA
Additional Features
    • CMOS COMPATIBLE
    • EUROPEAN PART NUMBER
    • HIGH RELIABILITY
    • HIGH RELIABILITY, WITH BUILT IN CLAMPING STRUCTURE AND GATE LEVEL SHIFTER DRIVER
    • KIT COMPOSED OF TRIAC AND CONTROLLER
    • LOGIC LEVEL
    • SENSITIVE GATE
    • WITH BUILT IN CLAMPING STRUCTURE AND GATE LEVEL SHIFTER DRIVER
JEDEC-95 Code
    • MS-012
    • TO-126
    • TO-202
    • TO-202AB
    • TO-218
    • TO-218AC
    • TO-220AB
    • TO-220AC
    • TO-225
    • TO-225AA
    • TO-226AA
    • TO-251
    • TO-251AA
    • TO-252
    • TO-252AA
    • TO-261AA
    • TO-262AA
    • TO-263AA
    • TO-263AB
    • TO-3
    • TO-39
    • TO-48
    • TO-64
    • TO-65
    • TO-66
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e4
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 235
    • 245
    • 255
    • 260
    • 265
    • NOT SPECIFIED
Reference Standard
    • IEC-60134
    • IEC-61000-4-4, 4-5
    • UL RECOGNIZED
Reset All
Part RoHS Manufacturer Trigger Device Type Package Style (Meter) Surface Mount Terminal Position Configuration Case Connection Maximum On-state Voltage Package Body Material Maximum DC Gate Trigger Current Non Repetitive Peak On-state Current Terminal Form Package Shape Maximum On-state Current No. of Elements Maximum Leakage Current Repetitive Peak Reverse Voltage Maximum Repetitive Peak Off-state Leakage Current No. of Terminals Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum RMS On-state Current JESD-30 Code Moisture Sensitivity Level (MSL) Maximum DC Gate Trigger Voltage Qualification Repetitive Peak Off-state Voltage Minimum Critical Rate of Rise of Commutation Voltage Minimum Critical Rate of Rise of Off-state Voltage Maximum Holding Current Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BTA201-800E

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

200 V/us

12 mA

SENSITIVE GATE

TO-92

e3

30

260

Z0109MA

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.3 V

Not Qualified

600 V

10 mA

SENSITIVE GATE

TO-92

e3

30

260

MAC97A8,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.1 mA

3

TRIACs

125 Cel

-40 Cel

TIN

.6 A

O-PBCY-T3

2 V

Not Qualified

600 V

30 V/us

10 mA

SENSITIVE GATE

TO-92

e3

30

260

BT131-600T/R

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

TIN

1 A

O-PBCY-T3

Not Qualified

600 V

SENSITIVE GATE

TO-92

e3

BTA201-800ER,116

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

200 V/us

12 mA

SENSITIVE GATE

TO-92

e3

30

260

BT131-800D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

3 V/us

20 V/us

10 mA

TO-92

e3

30

260

BTA201-600E/L02

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

-40 Cel

Tin (Sn)

1 A

O-PBCY-T3

600 V

SENSITIVE GATE

TO-92

e3

IEC-60134

Z0107MA0

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

TIN

1 A

O-PBCY-T3

Not Qualified

600 V

SENSITIVE GATE

TO-92

e3

Z0107MA

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.3 V

Not Qualified

600 V

10 mA

SENSITIVE GATE

TO-92

e3

30

260

BT132-600D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.5 mA

500 uA

3

TRIACs

125 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

600 V

10 mA

SENSITIVE GATE

TO-92

e3

30

260

BT1308-400D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.1 mA

3

TRIACs

125 Cel

-40 Cel

MATTE TIN

.8 A

O-PBCY-T3

2 V

Not Qualified

400 V

30 V/us

10 mA

SENSITIVE GATE

TO-92

e3

BTA201-800ER,126

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

600 V/us

12 mA

SENSITIVE GATE

TO-92

e3

30

260

Z0107MA,116

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.3 V

Not Qualified

600 V

20 V/us

10 mA

TO-92

e3

30

260

BT1306-400D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.1 mA

3

TRIACs

125 Cel

-40 Cel

MATTE TIN

.6 A

O-PBCY-T3

2 V

Not Qualified

400 V

30 V/us

10 mA

TO-92

e3

BT131-600/DG

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

Tin (Sn)

1 A

O-PBCY-T3

600 V

SENSITIVE GATE

TO-92

e3

IEC-60134

BT132-500D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.5 mA

500 uA

3

TRIACs

125 Cel

1 A

O-PBCY-T3

1.5 V

Not Qualified

500 V

10 mA

SENSITIVE GATE

TO-92

BT131-600E,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

600 V

5 V/us

50 V/us

10 mA

TO-92

e3

30

260

Z0103MA,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.3 V

Not Qualified

600 V

7 mA

SENSITIVE GATE

TO-92

e3

30

260

BT131

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

1 A

O-PBCY-T3

Not Qualified

600 V

LOGIC LEVEL

TO-92

BT1306-600D

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.1 mA

3

TRIACs

125 Cel

-40 Cel

MATTE TIN

.6 A

O-PBCY-T3

2 V

Not Qualified

600 V

30 V/us

10 mA

TO-92

e3

BTA2008-800E,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

.8 A

O-PBCY-T3

2 V

Not Qualified

800 V

600 V/us

12 mA

TO-92

e3

30

260

BT131-800D,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

3 V/us

20 V/us

10 mA

TO-92

e3

30

260

BTA201-800ER,112

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

200 V/us

12 mA

SENSITIVE GATE

TO-92

e3

30

260

BT131-800

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

TIN

1 A

O-PBCY-T3

Not Qualified

800 V

SENSITIVE GATE

TO-92

e3

MAC97A8/DG

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

Tin (Sn)

.6 A

O-PBCY-T3

600 V

SENSITIVE GATE

TO-92

e3

IEC-60134

BT131-800D/L01

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

Tin (Sn)

1 A

O-PBCY-T3

800 V

SENSITIVE GATE

TO-92

e3

IEC-60134

Z0109MA/L01

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

1 A

O-PBCY-T3

600 V

SENSITIVE GATE

TO-92

IEC-60134

BTA201-600E,112

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

600 V

200 V/us

12 mA

SENSITIVE GATE

TO-92

e3

30

260

Z0103MA

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

125 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.3 V

Not Qualified

600 V

7 mA

SENSITIVE GATE

TO-92

e3

30

260

BT131-600D,412

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

7 mA

THROUGH-HOLE

ROUND

1

.5 mA

3

TRIACs

150 Cel

-40 Cel

TIN

1 A

O-PBCY-T3

1.5 V

Not Qualified

600 V

3 V/us

20 V/us

10 mA

TO-92

e3

30

260

BT131-600D/L01

NXP Semiconductors

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

125 Cel

Tin (Sn)

1 A

O-PBCY-T3

600 V

SENSITIVE GATE

TO-92

e3

IEC-60134

97A8

Diodes Incorporated

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

110 Cel

-40 Cel

.8 A

O-PBCY-T3

Not Qualified

600 V

TO-226AA

NOT SPECIFIED

255

T1M5F600AL

Diodes Incorporated

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

.1 mA

3

TRIACs

110 Cel

-40 Cel

BRIGHT TIN

1 A

O-PBCY-T3

2 V

Not Qualified

600 V

20 V/us

10 mA

TO-226AA

e3

260

T1M5F600A

Diodes Incorporated

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

110 Cel

-40 Cel

BRIGHT TIN

1 A

O-PBCY-T3

Not Qualified

600 V

TO-226AA

e3

260

T1M5F400A

Diodes Incorporated

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

110 Cel

-40 Cel

1 A

O-PBCY-T3

Not Qualified

400 V

TO-226AA

NOT SPECIFIED

255

T1M3F400A

Diodes Incorporated

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

110 Cel

-40 Cel

1 A

O-PBCY-T3

Not Qualified

400 V

TO-226AA

NOT SPECIFIED

255

T08M5F600A

Diodes Incorporated

4 QUADRANT LOGIC LEVEL TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

THROUGH-HOLE

ROUND

1

3

110 Cel

-40 Cel

.8 A

O-PBCY-T3

Not Qualified

600 V

TO-226AA

SM0R5B42

Toshiba

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

15 mA

THROUGH-HOLE

ROUND

1

100 uA

3

125 Cel

-25 Cel

TIN LEAD

.5 A

O-PBCY-T3

2.3 V

Not Qualified

100 V

25 mA

TO-92

e0

SM10G10

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

1500 uA

2

TRIACs

100 Cel

-25 Cel

Tin/Lead (Sn/Pb)

10 A

O-MBFM-P2

3 V

Not Qualified

400 V

50 mA

TO-66

e0

SM10G14

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

1500 uA

2

100 Cel

-25 Cel

TIN LEAD

10 A

O-MBFM-P2

3 V

Not Qualified

400 V

50 mA

TO-3

e0

SM6B14

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

1500 uA

2

100 Cel

-25 Cel

TIN LEAD

6 A

O-MBFM-P2

3 V

Not Qualified

100 V

30 mA

TO-66

e0

SM10D14

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

1500 uA

2

100 Cel

-25 Cel

TIN LEAD

10 A

O-MBFM-P2

3 V

Not Qualified

200 V

50 mA

TO-3

e0

SM16G16

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

3000 uA

2

125 Cel

-25 Cel

TIN LEAD

16 A

O-MBFM-P2

3 V

Not Qualified

400 V

50 mA

TO-66

e0

SM1D43

Toshiba

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

5 mA

THROUGH-HOLE

ROUND

1

10 uA

3

125 Cel

-40 Cel

1 A

O-PBCY-T3

2 V

Not Qualified

200 V

3 V/us

10 V/us

10 mA

SENSITIVE GATE

TO-92

SM1L43

Toshiba

TRIAC

CYLINDRICAL

NO

BOTTOM

SINGLE

PLASTIC/EPOXY

10 mA

THROUGH-HOLE

ROUND

1

3

TRIACs

125 Cel

-40 Cel

1 A

O-PBCY-T3

1.5 V

Not Qualified

800 V

10 mA

TO-92

NOT SPECIFIED

NOT SPECIFIED

SM10D10

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

1500 uA

2

TRIACs

100 Cel

-25 Cel

Tin/Lead (Sn/Pb)

10 A

O-MBFM-P2

3 V

Not Qualified

200 V

50 mA

TO-66

e0

SM16G14

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

3000 uA

2

125 Cel

-25 Cel

TIN LEAD

16 A

O-MBFM-P2

3 V

Not Qualified

400 V

50 mA

TO-3

e0

SM16D16

Toshiba

TRIAC

FLANGE MOUNT

NO

BOTTOM

SINGLE

MAIN TERMINAL 2

METAL

50 mA

PIN/PEG

ROUND

1

3000 uA

2

125 Cel

-25 Cel

TIN LEAD

16 A

O-MBFM-P2

3 V

Not Qualified

200 V

50 mA

TO-66

e0

Triode For Alternating Current (TRIAC)

A Triode for Alternating Current (TRIAC) is a semiconductor device that is used to control the flow of electrical current in AC circuits. It is a bidirectional device that can conduct current in both directions, making it useful for AC power control applications.

TRIACs consist of a bidirectional switching element that allows for the control of AC current in both directions. They are typically used in applications where AC voltage needs to be controlled, such as in lighting control, motor speed control, and power supplies.

TRIACs work by applying a small current or voltage to the gate terminal, which allows current to flow through the device. Once the current reaches a certain level, the TRIAC turns on and conducts current in both directions until the current drops below a certain threshold, at which point the TRIAC turns off.

TRIACs are commonly used in conjunction with other components such as capacitors, inductors, and diodes to form complete electronic circuits. They are often used in power control circuits that require precise control of AC voltage or current.