Advanced Power Technology - 1075MP

  1. Home
  2. Advanced Power Technology - 1075MP
1075MP by Advanced Power Technology

Image shown is a representation only.

Manufacturer Advanced Power Technology
Manufacturer's Part Number 1075MP
Description NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 65 V;
Datasheet 1075MP Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 65 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: R-CRDB-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: 50 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

935374082598 by NXP Semiconductors

935374082598

NXP Semiconductors

RF Power Bipolar Transistors;
934045770114 by NXP Semiconductors

934045770114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 2; Terminal Form: FLAT;
A2G22S160-01SR3 by NXP Semiconductors

A2G22S160-01SR3

NXP Semiconductors

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
LFE18500X by NXP Semiconductors

LFE18500X

NXP Semiconductors

LFE18500X by NXP Semiconductors is a high-performance NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 120W, operates up to 200 °C, and offers a min power gain of 7 dB. Ideal for L-band frequency use in compact designs.
BLT52-T by NXP Semiconductors

BLT52-T

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
BLS2731-50 by NXP Semiconductors

BLS2731-50

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 6 A; No. of Terminals: 2;
SD1437 by STMicroelectronics

SD1437

STMicroelectronics

SD1437 by STMicroelectronics is a NPN RF Power BJT with 4 terminals, operating in the ultra high frequency band. It has a max power dissipation of 19.4W and max collector-emitter voltage of 25V. Ideal for amplifier applications due to its silicon element material and single configuration design.
ISL73128EHVF by Renesas Electronics

ISL73128EHVF

Renesas Electronics

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;
LLE18100X by NXP Semiconductors

LLE18100X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 15; Maximum Power Dissipation Ambient: 23 W;
LVE21050R by NXP Semiconductors

LVE21050R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Terminal Position: DUAL;
MSC82307 by STMicroelectronics

MSC82307

STMicroelectronics

STMicroelectronics' MSC82307 is a NPN BJT transistor with 2 terminals, ideal for S Band applications. It has a max power dissipation of 21.4W, hFE of 30, and IC of 1.2A. The package style is flange mount with a ceramic-metal-sealed co-fired body material.
LEE1015TA by NXP Semiconductors

LEE1015TA

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 860 MHz; Maximum Power Dissipation (Abs): 7.5 W; Maximum Collector Current (IC): .5 A;
2N3866A by New Jersey Semiconductor Products

2N3866A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
AM81214-060 by STMicroelectronics

AM81214-060

STMicroelectronics

STMicroelectronics' AM81214-060 is a NPN RF BJT transistor with 6.6 dB power gain, ideal for L Band applications. It has a max power dissipation of 107W, operating up to 250 °C. The transistor features a flange mount package and is suitable for switching purposes in various electronic circuits.
MSC82304 by STMicroelectronics

MSC82304

STMicroelectronics

STMicroelectronics' MSC82304 is a NPN RF BJT with 11.5W power dissipation, hFE of 30, and 0.6A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.
SD1538-08 by STMicroelectronics

SD1538-08

STMicroelectronics

SD1538-08 by STMicroelectronics is a NPN RF BJT transistor with 11A IC, 583W Pd, and L Band frequency. Ideal for switching applications in high-power circuits due to its ceramic-metal package and flat terminals. Suitable for use in systems requiring high-frequency operation and efficient power dissipation up to 200 °C.
LZ1418E100R by NXP Semiconductors

LZ1418E100R

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 4 A; Terminal Position: DUAL;
AM83135-015 by STMicroelectronics

AM83135-015

STMicroelectronics

STMicroelectronics AM83135-015 is a NPN RF BJT transistor with 5.2 dB min power gain, ideal for S Band applications. It has a max power dissipation of 71W, operates at up to 250 °C, and supports switching functions in a flange mount package.
934033550114 by NXP Semiconductors

934033550114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; No. of Elements: 1; Transistor Application: AMPLIFIER;
MSC83305 by STMicroelectronics

MSC83305

STMicroelectronics

STMicroelectronics' MSC83305 is a NPN RF BJT with 17.6W power dissipation, hFE of 30, and 0.7A collector current. Ideal for S Band applications like amplifiers due to its ceramic-metal package and high operating temperature of 200 °C.