Advanced Power Technology - 1075MP

  1. Home
  2. Advanced Power Technology - 1075MP
1075MP by Advanced Power Technology

Image shown is a representation only.

Manufacturer Advanced Power Technology
Manufacturer's Part Number 1075MP
Description NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 65 V;
Datasheet 1075MP Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 65 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: R-CRDB-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: 50 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SD1423 by STMicroelectronics

SD1423

STMicroelectronics

SD1423 by STMicroelectronics is an NPN RF Power BJT with 6 terminals and a max power dissipation of 29W. It operates in the ultra-high frequency band, suitable for amplifier applications. With a max collector-emitter voltage of 25V and max collector current of 2.5A, it offers high performance in a rectangular package style.
SD1855 by STMicroelectronics

SD1855

STMicroelectronics

SD1855 by STMicroelectronics is a NPN RF Power BJT with 20.6W power dissipation, suitable for L Band applications like amplifiers. It has a max collector-emitter voltage of 25V, max operating temp of 200 °C, and a min DC current gain of 15 hFE.
MAX2601ESA+T by Maxim Integrated

MAX2601ESA+T

Maxim Integrated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Minimum DC Current Gain (hFE): 100;
SD1530-01 by STMicroelectronics

SD1530-01

STMicroelectronics

SD1530-01 by STMicroelectronics is an NPN RF BJT transistor for switching applications. With a max power dissipation of 87.5W, it operates in L Band frequencies and handles a max collector current of 2.6A. This single configuration transistor comes in a round plastic package suitable for surface mount applications at temperatures up to 200 °C.
BLV20 by NXP Semiconductors

BLV20

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .9 A;
PTB20141 by Infineon Technologies

PTB20141

Infineon Technologies

NPN; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON; Terminal Position: DUAL;
RX1214B130Y by NXP Semiconductors

RX1214B130Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 9 A;
AM81719-030 by STMicroelectronics

AM81719-030

STMicroelectronics

STMicroelectronics' AM81719-030 is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 6.7 dB and can handle up to 67 W of power dissipation. With a max operating temperature of 200 °C, it is suitable for L Band frequencies in flange mount packages.
SD1449 by STMicroelectronics

SD1449

STMicroelectronics

SD1449 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the ultra-high frequency band. It has a max power dissipation of 19.4W and can handle a collector-emitter voltage of 25V. Ideal for amplifier applications due to its high-frequency capabilities and silicon element material.
MSC81325M by STMicroelectronics

MSC81325M

STMicroelectronics

MSC81325M by STMicroelectronics is a NPN RF Power BJT with 24A IC, 880W power dissipation, and L Band frequency. Ideal for amplifier applications, it features a ceramic-metal package body, single configuration, and flat terminal form. Operating at up to 200 °C, this transistor offers a min hFE of 15 and radial terminal position.
BLS3135-65,114 by NXP Semiconductors

BLS3135-65,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
TAN15 by Advanced Power Technology

TAN15

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
2SC3006 by Toshiba

2SC3006

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
PTB32001X by NXP Semiconductors

PTB32001X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS;
BLU15/12 by NXP Semiconductors

BLU15/12

NXP Semiconductors

BLU15/12 by NXP Semiconductors is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 35W, operates at ultra-high frequencies, and offers a min power gain of 7.8 dB. Its robust design supports high temperatures up to 200 °C.
MRF392 by Onsemi

MRF392

Onsemi

MRF392 by Onsemi is an NPN RF Power BJT with 2 elements, suitable for ultra-high frequency band applications. It features a max collector-emitter voltage of 30V, max operating temperature of 200°C, and a common emitter configuration. This ceramic-metal-sealed co-fired transistor has a package style of flange mount and can handle a max collector current of 16A.
SD1541-09 by STMicroelectronics

SD1541-09

STMicroelectronics

SD1541-09 by STMicroelectronics is a NPN RF BJT transistor with 65V VCE, 22A IC, and 1460W Ptot. Ideal for L Band applications, it's a single configuration switch transistor in a ceramic-metal package suitable for high-power switching operations.
RZB12050Y by NXP Semiconductors

RZB12050Y

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Transistor Element Material: SILICON;
BLU97 by NXP Semiconductors

BLU97

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): 1.2 A; Transistor Element Material: SILICON;
BDP950H6327TR by Infineon Technologies

BDP950H6327TR

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;