New Jersey Semiconductor Products - 2N6080

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1;

The NXP Semiconductors BLW32 is an NPN RF Power BJT with a single configuration, ideal for amplifier applications in the UHF band. It offers a min power gain of 11 dB, max collector-emitter voltage of 30V, and can handle up to 10.8W power dissipation at 200°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2700 MHz; Maximum Collector Current (IC): .35 A; Terminal Position: BOTTOM;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .3 A; No. of Terminals: 4; Maximum Collector-Emitter Voltage: 6 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 4; Maximum Collector-Base Capacitance: 25 pF;

SD4590 by STMicroelectronics is an NPN RF Power BJT with 2 elements, ideal for amplifier applications in the UHF band. It has a max power dissipation of 300W, operates at up to 200 °C, and features a common emitter configuration.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Maximum Collector-Emitter Voltage: 15 V; Package Style (Meter): SMALL OUTLINE;

STMicroelectronics' AM1517-025 is an NPN BJT transistor with 8.5 dB min power gain, ideal for amplifier applications in L Band frequencies. It has a max power dissipation of 45 W and can handle up to 2.5 A collector current, making it suitable for high-power RF amplification needs. The package is ceramic-metal sealed co-fired with a square shape and flange mount style for efficient heat dissipation.

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

SD1530-08 by STMicroelectronics is an NPN BJT transistor for switching applications in L Band. With 87.5W power dissipation, it operates at max 200 °C with a max collector-emitter voltage of 65V. This single configuration transistor has a max collector current of 2.6A and min hFE of 10, suitable for surface mount applications.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

MSC81450M by STMicroelectronics is an NPN RF power BJT designed for amplifier applications. It features a max power dissipation of 910 W, operates at up to 200 °C, and supports L band frequencies. Its flat terminal design allows for efficient surface mounting.

STMicroelectronics' SD1540 is an NPN RF Power BJT with 22A IC, ideal for L Band applications. It features a plastic/epoxy package, single configuration, and flat terminal form. Suitable for switching purposes, it operates at up to 175 °C with a flange mount style.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2900 MHz; Maximum Collector Current (IC): .35 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .75 A; Maximum Collector-Emitter Voltage: 36 V; Transistor Element Material: SILICON;