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Manufacturer | Agilent Technologies |
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Manufacturer's Part Number | ATF-54143-TR1G |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .725 W; Moisture Sensitivity Level (MSL): 1; |
Datasheet | ATF-54143-TR1G Datasheet |
In Stock | 509 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | HIGH ELECTRON MOBILITY |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .12 A |
Sub-Category: | FET RF Small Signal |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 4 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | C BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |
Maximum Power Dissipation Ambient: | .725 W |
Moisture Sensitivity Level (MSL): | 1 |
Minimum Power Gain (Gp): | 15 dB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 5 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .12 A |