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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | BF2030E6814HTSA1 |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Elements: 1; |
Datasheet | BF2030E6814HTSA1 Datasheet |
In Stock | 11,371 |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 20 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .04 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 10 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Additional Features: | LOW NOISE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Case Connection: | SOURCE |