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Manufacturer | Alpha & Omega Semiconductor |
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Manufacturer's Part Number | AO3422L |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .16 ohm; |
Datasheet | AO3422L Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.1 A |
Maximum Pulsed Drain Current (IDM): | 10 A |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 1.25 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | 1.25 W |
Maximum Drain-Source On Resistance: | .16 ohm |
Maximum Feedback Capacitance (Crss): | 12.6 pF |
JEDEC-95 Code: | TO-236 |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 55 V |
Maximum Drain Current (Abs) (ID): | 2.1 A |