Ampleon Netherlands B V - BLF888D

  1. Home
  2. Ampleon Netherlands B V - BLF888D
BLF888D by Ampleon Netherlands B V

Image shown is a representation only.

Manufacturer Ampleon Netherlands B V
Manufacturer's Part Number BLF888D
Description RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet BLF888D Datasheet
In Stock626
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
626 - -

Popular Products

Category Top Products

IXZR08N120 by IXYS Corporation

IXZR08N120

IXYS Corporation

IXZR08N120 by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. Ideal for high-power RF systems due to its isolated case connection and metal-oxide semiconductor technology.
MRF181SR1 by Onsemi

MRF181SR1

Onsemi

MRF181SR1 by Onsemi is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This SINGLE configuration FET has a max ID of 2A and comes in a CERAMIC, METAL-SEALED COFIRED package.
MRF6V2150NR1 by Freescale Semiconductor

MRF6V2150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
RF2L36040CF2 by STMicroelectronics

RF2L36040CF2

STMicroelectronics

RF Power Field-Effect Transistors;
2SK3075(TE12L,Q) by Toshiba

2SK3075(TE12L,Q)

Toshiba

RF Power Field-Effect Transistors;
MRF1513NT1 by NXP Semiconductors

MRF1513NT1

NXP Semiconductors

NXP Semiconductors' MRF1513NT1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a 2A Drain Current and 31.2W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
A2T21S161W12SR3 by NXP Semiconductors

A2T21S161W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2I22D050GNR1 by NXP Semiconductors

A2I22D050GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3;
PD55025-E by STMicroelectronics

PD55025-E

STMicroelectronics

STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
934065695118 by NXP Semiconductors

934065695118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
934064592112 by NXP Semiconductors

934064592112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
PD84008S-E by STMicroelectronics

PD84008S-E

STMicroelectronics

PD84008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.
MRF6V10010NR4 by Freescale Semiconductor

MRF6V10010NR4

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
PD84010TR-E by STMicroelectronics

PD84010TR-E

STMicroelectronics

PD84010TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
PTFA180701EV4R250XTMA1 by Wolfspeed

PTFA180701EV4R250XTMA1

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
A2T18S160W31GSR3 by NXP Semiconductors

A2T18S160W31GSR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
A2I25D025GNR1 by NXP Semiconductors

A2I25D025GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
PD85025S-E by STMicroelectronics

PD85025S-E

STMicroelectronics

PD85025S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
SD4931 by STMicroelectronics

SD4931

STMicroelectronics

SD4931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 200 V, and can dissipate up to 389 W. Ideal for high-performance RF amplification in compact designs.