Analog Devices - ADL5531ACPZ-R7

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;

HMC462LP5 by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 2-20 GHz, handles up to 18 dBm input power, and has a max temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact surface mount package.

XL1000-BD-000V by M/a-com Technology Solutions is a GAAS RF amplifier with 12dB gain, operating b/w 20-40 GHz. It has a max input power of 12 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its compact construction and temperature range of -55 to 85°C.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

NXP Semiconductors' BGA2817,115 is a RF & Microwave Amplifier with 3.3V power supply, 6 terminals, and max operating temp of 85°C. It features surface mounting and tin terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;

Qorvo's TGA2227-SM is a wide band medium power RF amplifier with 15.7 dB gain, operating from 2-22 GHz. It can handle up to 40 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

Qorvo's SBB5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF and microwave systems.

Qorvo's NBB-400 is a ceramic-packaged RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates b/w -45°C to +85°C temperatures and requires a 3.9V supply voltage.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;