Analog Devices - ADL5533ACPZ-R7

Broadcom's MSA-1105-STRG is a RF & Microwave Amplifier with 10dB gain, operating from 50MHz to 1300MHz. Featuring a max input power of 13dBm and VSWR of 1.7, it is ideal for wideband low-power applications requiring a characteristic impedance of 50Ω.

MAR-8ASM by Mini-circuits is a wide band low power RF amplifier with 20 dB gain, 50 ohm impedance, and 1.8 VSWR. Ideal for RF & microwave applications, it operates from -40 to 85°C, has a max input power of 13 dBm, and covers frequencies from DC to 1000 MHz.

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;

Analog Devices' HMC414MS8GE is a narrow band medium power RF amplifier with 17 dB gain, operating from 2200 to 2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 20000 MHz;

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 28 dB;

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.

HMC441LM1 by Analog Devices is a wide band low power RF amplifier with 11 dB gain and 15 dBm max input power. It operates b/w 7-15.5 GHz, has a characteristic impedance of 50 ohms, and requires a 5V power supply. Ideal for RF & microwave applications requiring high performance in a compact package.