Agilent Technologies - MGA-61563-BLKG

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;

MAAM28000-A1G by TE Connectivity is a GAAS RF amplifier with 10V power supply, 8 terminals, and max operating temp of 100°C. Its ceramic package body material and surface mounting feature make it ideal for high-frequency applications in telecommunications and radar systems.

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 12 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

HMC475ST89ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 4500 MHz, handling up to 17 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount construction in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

Analog Devices' HMC635LC4TR is a wide band low power RF amplifier with 24 terminals, operating at temperatures from -55 to 70°C. Utilizing GaAs technology, it requires a 5V power supply and features a ceramic package for surface mount applications in RF & microwave systems.

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.