Analog Devices - ADL7003CHIPS

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

XP1035-QH-0G00 by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wideband medium-power applications, it features surface mounting and can withstand temperatures from -55°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;

Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND HIGH POWER;

HELA-10+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, suitable for applications requiring high-frequency amplification in RF & microwave systems.

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

Qorvo's TGA2227-SM is a wide band medium power RF amplifier with 15.7 dB gain, operating from 2-22 GHz. It can handle up to 40 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Frequency: 3000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 15 dBm; JESD-609 Code: e3;

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

Analog Devices' HMC3653LP3BETR is a wide band low power RF amplifier with 12 terminals, operating from 7-15 GHz. It has a supply voltage of 5V and consumes up to 55mA current. Suitable for RF & microwave applications, it offers bipolar technology in a surface mount package.

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

WIDE BAND LOW POWER;