Infineon Technologies - BGA427H6327XTSA1

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

XP1044-QL-0N00 by M/a-com Technology Solutions is a RF & Microwave Amplifier with 16.5 dB Gain, 23 dBm Max Input Power (CW), and operates b/w 3500-6000 MHz. Ideal for narrow band medium power applications due to its COMPONENT construction and Matte Tin (Sn) terminal finish.

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3.6;

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

HELA-10 by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface-mount package.

Qorvo's QPA1019D is a GAN technology RF amplifier with 34.4 dB gain, 25 dBm CW input power, and 4 VSWR. Ideal for wideband high-power applications from 4500 MHz to 7000 MHz, it operates at temperatures ranging from -40°C to 85°C.

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.

Broadcom's MGA-62563-TR1G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, surface mounting, and requires 3-5V power supply with a max current draw of 77 mA.