Analog Devices - ADL8106ACEZ-R7

  1. Home
  2. Analog Devices - ADL8106ACEZ-R7
ADL8106ACEZ-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADL8106ACEZ-R7
Description WIDE BAND LOW POWER;
Datasheet ADL8106ACEZ-R7 Datasheet
In Stock884
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
884 - -

Popular Products

Category Top Products

GRF2071 by Guerrilla Rf

GRF2071

Guerrilla Rf

GRF2071 by Guerrilla Rf is a PHEMT technology RF amplifier with 18 dB gain, operating from 700 MHz to 2700 MHz. It has a max input power of 23 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40°C to 105°C.
MGA-72543BLK by Agilent Technologies

MGA-72543BLK

Agilent Technologies

Agilent Technologies' MGA-72543BLK is a wide band low power RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, making it ideal for RF and microwave applications requiring high frequency amplification in a compact form factor.
AMMP-6220-TR1 by Broadcom

AMMP-6220-TR1

Broadcom

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
GALI-51+ by Mini-circuits

GALI-51+

Mini-circuits

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.
AMMP-6220-TR1 by Agilent Technologies

AMMP-6220-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
SST13LP05-MLCF by Microchip Technology

SST13LP05-MLCF

Microchip Technology

SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
ATF-50189 by Broadcom

ATF-50189

Broadcom

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 2400 MHz; Construction: COAXIAL;
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
HMC636ST89E by Analog Devices

HMC636ST89E

Analog Devices

Analog Devices' HMC636ST89E is a GAAS technology RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V power supply. Ideal for wideband low-power applications requiring surface mounting in temperatures ranging from -40°C to 85°C.
HMC429LP4E by Hittite Microwave

HMC429LP4E

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
ADA-4643-BLKG by Broadcom

ADA-4643-BLKG

Broadcom

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.
BGU6102,147 by NXP Semiconductors

BGU6102,147

NXP Semiconductors

NXP Semiconductors' BGU6102,147 is a wide band low power RF amplifier with 6 terminals and operates on 3V supply. With a max operating temperature of 85°C, it is ideal for surface mount applications in RF and microwave systems.
CMPA901A035F1 by Wolfspeed

CMPA901A035F1

Wolfspeed

WIDE BAND HIGH POWER;
HMC516 by Hittite Microwave

HMC516

Hittite Microwave

WIDE BAND LOW POWER; Technology: GAAS; Maximum Input Power (CW): 5 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Terminal Finish: Gold (Au);
MGA-86576-TR1 by Hewlett Packard

MGA-86576-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 8000 MHz; Construction: COMPONENT; Gain: 20 dB;
HMC506LP4TR by Analog Devices

HMC506LP4TR

Analog Devices

NARROW BAND LOW POWER;
HMC516 by Analog Devices

HMC516

Analog Devices

Analog Devices' HMC516 is a GAAS RF amplifier with 18dB gain, operating from 7-17GHz. It has a max input power of 5dBm and requires a 3V supply, drawing 88mA. Ideal for wideband low-power applications in RF & microwave systems due to its high performance and gold terminal finish.
HMC788ALP2E by Analog Devices

HMC788ALP2E

Analog Devices

HMC788ALP2E by Analog Devices is a wide band low power RF amplifier with 9 dB gain and max input power of 15 dBm. It operates in the frequency range of 0-10000 MHz, making it suitable for various RF and microwave applications. With a temperature range from -40 to 85°C, this component is ideal for demanding environments.
MGA-81563-TR1 by Hewlett Packard

MGA-81563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;