Analog Devices - ADPA7009-2ACEZ-R7

  1. Home
  2. Analog Devices - ADPA7009-2ACEZ-R7
ADPA7009-2ACEZ-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADPA7009-2ACEZ-R7
Description WIDE BAND MEDIUM POWER;
Datasheet ADPA7009-2ACEZ-R7 Datasheet
In Stock338
NAME DESCRIPTION
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
338 $275.400 $93,085.200

Popular Products

Category Top Products

RF5110GTR7 by Rf Micro Devices

RF5110GTR7

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;
TGA2214 by Qorvo

TGA2214

Qorvo

Qorvo's TGA2214 is a wide band high power RF amplifier with 22 dB gain, operating from 2-18 GHz. It can handle up to 31 dBm CW input power and operates in temperatures ranging from -40 to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
MGA-81563-TR1 by Hewlett Packard

MGA-81563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;
ADL5521ACPZ-R7 by Analog Devices

ADL5521ACPZ-R7

Analog Devices

ADL5521ACPZ-R7 by Analog Devices is a wide band low power RF amplifier with a gain of 10.5 dB, operating frequency range from 400 MHz to 4000 MHz, and max input power of 20 dBm. It is constructed using GaAs technology, has a characteristic impedance of 50 ohm, and is suitable for applications requiring high-frequency amplification in RF and microwave systems.
MGA-81563-BLK by Hewlett Packard

MGA-81563-BLK

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 100 MHz;
SBB-2089Z by Sirenza Microdevices

SBB-2089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.
HMC1040LP3CE by Analog Devices

HMC1040LP3CE

Analog Devices

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.
TGA4803 by Qorvo

TGA4803

Qorvo

Qorvo's TGA4803 is a wide band medium power RF amplifier with 8 dB gain and 18 dBm CW input power. Operating from 0-50000 MHz, it is ideal for various RF applications requiring high performance amplification in components.
NPA1006A by M/a-com Technology Solutions

NPA1006A

M/a-com Technology Solutions

NPA1006A by M/a-com Technology Solutions is a wide band high power RF amplifier with 12.5 dB gain, operating from 20 MHz to 1000 MHz. It features a max VSWR of 15 and operates on a 28V power supply, suitable for surface mount applications in RF & microwave systems.
ZHL-1-2W+ by Mini-circuits

ZHL-1-2W+

Mini-circuits

ZHL-1-2W+ by Mini-circuits is a wide band medium power RF amplifier with a gain of 29 dB. It has a max input power of 10 dBm and can operate in temperatures ranging from -20 to 65 °C. This coaxial amplifier is suitable for applications requiring amplification in the frequency range of 5 MHz to 500 MHz.
NBB-400 by Rf Micro Devices

NBB-400

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Minimum Operating Temperature: -45 Cel;
MSA-1105-TR1G by Broadcom

MSA-1105-TR1G

Broadcom

Broadcom's MSA-1105-TR1G is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. The component features surface mounting and operates at a supply voltage of 5.5V with a current draw of 70mA.
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
XB1007-QT-0G0T by M/a-com Technology Solutions

XB1007-QT-0G0T

M/a-com Technology Solutions

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.
QPA1027 by Qorvo

QPA1027

Qorvo

Qorvo's QPA1027 is a GAN technology RF amplifier with 31dB gain, operating from 2800-3500MHz. It has a max input power of 29dBm and VSWR of 3, suitable for narrowband high-power applications. With surface mount feature and 50 ohm impedance, it is ideal for RF & microwave systems requiring high performance in plastic/epoxy package.
HMC532LP4E by Hittite Microwave

HMC532LP4E

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;
QPA1011D by Qorvo

QPA1011D

Qorvo

WIDE BAND HIGH POWER;
HMC441LP3TR by Hittite Microwave

HMC441LP3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.