Analog Devices - HMC-ALH435

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;

Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.

Analog Devices' HMC-ALH140 is a GAAS wide band low power RF amplifier with 10 dB gain, operating from 24-40 GHz. It has a max input power of 6 dBm, operates on 4V supply, and draws up to 100 mA current. Ideal for RF & microwave applications requiring high frequency amplification in extreme temperature conditions.

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;

The Qorvo TGA2567-SM is a wide band medium power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 22 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

WIDE BAND LOW POWER;

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

ADL5542ACPZ-R7 by Analog Devices is a wideband medium power RF amplifier with 11.2 dB gain, operating from 50 MHz to 6 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

GALI-21+ by Mini-circuits is a wideband low power RF amplifier with 11.5 dB gain, suitable for frequencies from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.5, making it ideal for RF and microwave applications requiring compact surface-mount components.

The Mini-circuits ERA-2SM+ is a wide band low power RF amplifier with 11.9 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 15 dBm input power, and has a VSWR of 1.6. Ideal for RF & microwave applications requiring compact surface mount components.

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

Qorvo's QPA1019D is a GAN technology RF amplifier with 34.4 dB gain, 25 dBm CW input power, and 4 VSWR. Ideal for wideband high-power applications from 4500 MHz to 7000 MHz, it operates at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.