HMC1114PM5E by Analog Devices | RF & Microwave

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Manufacturer	Analog Devices
Manufacturer's Part Number	HMC1114PM5E
Description	WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Power Supplies (V): 28;
Datasheet	HMC1114PM5E Datasheet
In Stock	54

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Construction:	COMPONENT
Minimum Operating Frequency:	2700 MHz
Maximum Supply Current:	150 mA
Terminal Finish:	NICKEL PALLADIUM GOLD
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	SURFACE MOUNT
No. of Functions:	1
Maximum Voltage Standing Wave Ratio:	6
No. of Terminals:	32
Maximum Input Power (CW):	18 dBm
Package Equivalence Code:	LCC32,.2SQ,20
Technology:	GAN
Characteristic Impedance:	50 ohm
Maximum Operating Temperature:	85 Cel
Maximum Operating Frequency:	3800 MHz
RF or Microwave Device Type:	WIDE BAND HIGH POWER
Gain:	31 dB
Power Supplies (V):	28

Pricing (USD)

Qty.	Unit Price	Ext. Price
54	-	-

2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.