Analog Devices - HMC466LP4E

  1. Home
  2. Analog Devices - HMC466LP4E
HMC466LP4E by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC466LP4E
Description NARROW BAND LOW POWER; Minimum Operating Frequency: 6100 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6720 MHz; JESD-609 Code: e3;
Datasheet HMC466LP4E Datasheet
In Stock515
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Minimum Operating Frequency: 6100 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 6720 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
515 $16.460 $8,476.900

Popular Products

Category Top Products

CMD317C4 by Qorvo

CMD317C4

Qorvo

WIDE BAND LOW POWER;
ADL5523ACPZ-R7 by Analog Devices

ADL5523ACPZ-R7

Analog Devices

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.
MGA-82563-TR1 by Agilent Technologies

MGA-82563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
TGA2578 by Qorvo

TGA2578

Qorvo

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.
HMC506LP4TR by Analog Devices

HMC506LP4TR

Analog Devices

NARROW BAND LOW POWER;
BGU8103X by NXP Semiconductors

BGU8103X

NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
HMC326MS8GE by Hittite Microwave

HMC326MS8GE

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
HMC463LP5ETR by Hittite Microwave

HMC463LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 20000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT;
SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
A64 by Wj Communications

A64

Wj Communications

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
NJG1150UA2-TE1 by Nisshinbo Micro Devices

NJG1150UA2-TE1

Nisshinbo Micro Devices

NARROW BAND LOW POWER;
A64 by M/a-com Technology Solutions

A64

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: CAN4,.3; Power Supplies (V): 15; Minimum Operating Frequency: 10 MHz;
CMPA1C1D080F by Wolfspeed

CMPA1C1D080F

Wolfspeed

NARROW BAND HIGH POWER;
SGA3363ZSR by Qorvo

SGA3363ZSR

Qorvo

SGA3363ZSR by Qorvo is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. Operating from 0 to 5500 MHz, it has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact package.
BGU8009 by NXP Semiconductors

BGU8009

NXP Semiconductors

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.
HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.