Analog Devices - HMC637ASCPZ-EP-R7

  1. Home
  2. Analog Devices - HMC637ASCPZ-EP-R7
HMC637ASCPZ-EP-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC637ASCPZ-EP-R7
Description WIDE BAND MEDIUM POWER; Gain: 12 dB; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 105 Cel; Maximum Input Power (CW): 25 dBm;
Datasheet HMC637ASCPZ-EP-R7 Datasheet
In Stock630
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 25 dBm
Minimum Operating Frequency: 100 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 105 Cel
Maximum Operating Frequency: 6000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Minimum Operating Temperature: -55 Cel
Gain: 12 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
630 - -

Popular Products

Category Top Products

ZX60-2411BM-S+ by Mini-circuits

ZX60-2411BM-S+

Mini-circuits

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
RF5110G by Rf Micro Devices

RF5110G

Rf Micro Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
TQP3M9035 by Triquint Semiconductor

TQP3M9035

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
760 by Ms Kennedy

760

Ms Kennedy

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC549MS8GTR by Analog Devices

HMC549MS8GTR

Analog Devices

Analog Devices' HMC549MS8GTR is a GaAs technology RF amplifier with 5V power supply, operating b/w -40°C to 85°C. It features wideband low power performance in a surface mount package, ideal for RF and microwave applications.
HMC506LP4ETR by Analog Devices

HMC506LP4ETR

Analog Devices

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
ADL9006ACGZN by Analog Devices

ADL9006ACGZN

Analog Devices

RF/Microwave Amplifiers;
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
MAX2659ELT/V+T by Maxim Integrated

MAX2659ELT/V+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
MAAM-011101-TR1000 by M/a-com Technology Solutions

MAAM-011101-TR1000

M/a-com Technology Solutions

MAAM-011101-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 17 dB gain, operating from 4 to 20 GHz. It can handle up to 23 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification.
GALI-51+ by Mini-circuits

GALI-51+

Mini-circuits

GALI-51+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain and 1.7 VSWR. It operates from 0 to 4000 MHz, suitable for various RF applications. With a compact plastic/epoxy package, it can handle up to 13 dBm input power and supports surface mounting.
TQP369184 by Triquint Semiconductor

TQP369184

Triquint Semiconductor

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;
HMC372LP3E by Hittite Microwave

HMC372LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
SPF5043Z by Qorvo

SPF5043Z

Qorvo

Qorvo's SPF5043Z is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.
ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.