RF5110G by Rf Micro Devices | RF & Microwave

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Manufacturer	Rf Micro Devices
Manufacturer's Part Number	RF5110G
Description	NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
Datasheet	RF5110G Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Construction:	COMPONENT
Minimum Operating Frequency:	880 MHz
Sub-Category:	RF/Microwave Amplifiers
Terminal Finish:	Matte Tin (Sn) - annealed
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	SURFACE MOUNT
No. of Functions:	1
Maximum Voltage Standing Wave Ratio:	10
No. of Terminals:	16
Maximum Input Power (CW):	13 dBm
Package Equivalence Code:	LCC16,.12SQ,20
Technology:	GAAS
Characteristic Impedance:	50 ohm
Additional Features:	IT CAN ALSO OPERATE AT 800 TO 950 MHZ
Maximum Operating Temperature:	85 Cel
Maximum Operating Frequency:	915 MHz
RF or Microwave Device Type:	NARROW BAND HIGH POWER
Gain:	32 dB
Power Supplies (V):	3/5

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