National Semiconductor - LMV221SD/NOPB

  1. Home
  2. National Semiconductor - LMV221SD/NOPB
LMV221SD/NOPB by National Semiconductor

Image shown is a representation only.

Manufacturer National Semiconductor
Manufacturer's Part Number LMV221SD/NOPB
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Package Equivalence Code: SOLCC6,.1,25;
Datasheet LMV221SD/NOPB Datasheet
In Stock25,660
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 6
Package Equivalence Code: SOLCC6,.1,25
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 10 mA
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Power Supplies (V): 2.7
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
25,660 - -

Popular Products

Category Top Products

HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
MGA-86576-TR1G by Agilent Technologies

MGA-86576-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
HMC460LC5 by Analog Devices

HMC460LC5

Analog Devices

Analog Devices' HMC460LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC635LC4TR by Hittite Microwave

HMC635LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
HMC1040LP3CE by Analog Devices

HMC1040LP3CE

Analog Devices

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.
HMC788ALP2ETR by Analog Devices

HMC788ALP2ETR

Analog Devices

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.
HMC453ST89ETR by Analog Devices

HMC453ST89ETR

Analog Devices

HMC453ST89ETR by Analog Devices is a wide band medium power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is surface mountable. This amplifier is commonly used in RF and microwave applications.
MAX2659ELT+T by Analog Devices

MAX2659ELT+T

Analog Devices

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.
HMC794LP3E by Analog Devices

HMC794LP3E

Analog Devices

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.
HMC659LC5 by Hittite Microwave

HMC659LC5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
HMC963LC4TR by Analog Devices

HMC963LC4TR

Analog Devices

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.
HMC441LH5TR by Analog Devices

HMC441LH5TR

Analog Devices

Analog Devices' HMC441LH5TR is a GAAS RF amplifier with 12 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current draw of 115mA. Ideal for wideband medium-power applications, this surface-mount device offers reliable performance in RF and microwave systems.
HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.
HMC549MS8G by Hittite Microwave

HMC549MS8G

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
CMD245C4 by Custom Mmic Design Services

CMD245C4

Custom Mmic Design Services

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4; Minimum Operating Temperature: -55 Cel; Gain: 14 dB;
TQP3M9009 by Qorvo

TQP3M9009

Qorvo

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
QPA1011D by Qorvo

QPA1011D

Qorvo

WIDE BAND HIGH POWER;